| Citation: |
Chen Haifeng, Ma Xiaohua, Guo Lixin, Du Huimin. GIDL current degradation in LDD nMOSFET under hot hole stress[J]. Journal of Semiconductors, 2011, 32(11): 114001. doi: 10.1088/1674-4926/32/11/114001
Chen H F, Ma X H, Guo L X, Du H M. GIDL current degradation in LDD nMOSFET under hot hole stress[J]. J. Semicond., 2011, 32(11): 114001. doi: 10.1088/1674-4926/32/11/114001.
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GIDL current degradation in LDD nMOSFET under hot hole stress
doi: 10.1088/1674-4926/32/11/114001
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Abstract
The degradation of gate-induced drain leakage (GIDL) current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter IDIFF. IDIFF is the difference of GIDL currents measured under two conditions of drain voltage VD = 1.4 V and gate voltage VG = -1.4 V while VDG is fixed. After the stress GIDL currents decay due to holes trapping in the oxide around the gate-to-drain overlap region. These trapped holes diminish ΔEX which is the deference of the lateral electrical field of these two symmetrical measurement conditions in the overlap region so as to make IDIFF lessening. IDIFF extracted from GIDL currents decreases with increasing stress time t. The degradation shifts of IDIFF,MAX (ΔIDIFF,MAX) follows a power law against t: ΔIDIFF,MAX ∝tm, m = 0.3. Hot electron stress is performed to validate the related mechanism.-
Keywords:
- GIDL
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] -
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