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Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure

Wang Yongshun, Feng Jingjing, Liu Chunjuan, Wang Zaixing, Zhang Caizhen and Chang Peng

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Abstract: The failure of a bipolar static induction transistor (BSIT) often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.

Key words: bipolar static induction transistordynamical parameterstransient processespotential barrierpower consumption

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    Received: 20 August 2015 Revised: 22 June 2011 Online: Published: 01 November 2011

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      Wang Yongshun, Feng Jingjing, Liu Chunjuan, Wang Zaixing, Zhang Caizhen, Chang Peng. Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure[J]. Journal of Semiconductors, 2011, 32(11): 114005. doi: 10.1088/1674-4926/32/11/114005 Wang Y S, Feng J J, Liu C J, Wang Z X, Zhang C Z, Chang P. Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure[J]. J. Semicond., 2011, 32(11): 114005. doi: 10.1088/1674-4926/32/11/114005.Export: BibTex EndNote
      Citation:
      Wang Yongshun, Feng Jingjing, Liu Chunjuan, Wang Zaixing, Zhang Caizhen, Chang Peng. Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure[J]. Journal of Semiconductors, 2011, 32(11): 114005. doi: 10.1088/1674-4926/32/11/114005

      Wang Y S, Feng J J, Liu C J, Wang Z X, Zhang C Z, Chang P. Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure[J]. J. Semicond., 2011, 32(11): 114005. doi: 10.1088/1674-4926/32/11/114005.
      Export: BibTex EndNote

      Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure

      doi: 10.1088/1674-4926/32/11/114005
      • Received Date: 2015-08-20
      • Accepted Date: 2011-04-25
      • Revised Date: 2011-06-22
      • Published Date: 2011-10-20

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