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Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

Ji Panfeng, Liu Naixin, Wei Tongbo, Liu Zhe, Lu Hongxi, Wang Junxi and Li Jinmin

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Abstract: With an n-AlGaN (4 nm)/GaN (4 nm) superlattice (SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer, the efficiency droop of GaN-based LEDs has been improved. When the injection current is lower than 100 mA, the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL. However, as the injection current increases more than 100 mA, the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency. The improvement of the efficiency droop of LEDs with n-AlGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities. The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543 μA, and the electro-static discharge (ESD) pass yield of an LED at human body mode (HBM)-ESD impulses of 2000 V increases from 60% to 90%.

Key words: n-AlGaN/GaN superlatticeswall plng efficiencydroopreverse current

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    Received: 20 August 2015 Revised: 31 May 2011 Online: Published: 01 November 2011

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      Ji Panfeng, Liu Naixin, Wei Tongbo, Liu Zhe, Lu Hongxi, Wang Junxi, Li Jinmin. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J]. Journal of Semiconductors, 2011, 32(11): 114006. doi: 10.1088/1674-4926/32/11/114006 Ji P F, Liu N X, Wei T B, Liu Z, Lu H X, Wang J X, Li J M. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J]. J. Semicond., 2011, 32(11): 114006. doi: 10.1088/1674-4926/32/11/114006.Export: BibTex EndNote
      Citation:
      Ji Panfeng, Liu Naixin, Wei Tongbo, Liu Zhe, Lu Hongxi, Wang Junxi, Li Jinmin. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J]. Journal of Semiconductors, 2011, 32(11): 114006. doi: 10.1088/1674-4926/32/11/114006

      Ji P F, Liu N X, Wei T B, Liu Z, Lu H X, Wang J X, Li J M. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J]. J. Semicond., 2011, 32(11): 114006. doi: 10.1088/1674-4926/32/11/114006.
      Export: BibTex EndNote

      Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

      doi: 10.1088/1674-4926/32/11/114006
      Funds:

      The National High Technology Research and Development Program of China (863 Program)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-05-12
      • Revised Date: 2011-05-31
      • Published Date: 2011-10-20

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