SEMICONDUCTOR DEVICES

Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

Ma Xiangrong, Shi Wei, Ji Weili and Xue Hong

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Abstract: A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

Key words: light controlled prebreakdown

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    Received: 20 August 2015 Revised: 04 August 2011 Online: Published: 01 December 2011

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      Ma Xiangrong, Shi Wei, Ji Weili, Xue Hong. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch[J]. Journal of Semiconductors, 2011, 32(12): 124006. doi: 10.1088/1674-4926/32/12/124006 Ma X R, Shi W, Ji W L, Xue H. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch[J]. J. Semicond., 2011, 32(12): 124006. doi: 10.1088/1674-4926/32/12/124006.Export: BibTex EndNote
      Citation:
      Ma Xiangrong, Shi Wei, Ji Weili, Xue Hong. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch[J]. Journal of Semiconductors, 2011, 32(12): 124006. doi: 10.1088/1674-4926/32/12/124006

      Ma X R, Shi W, Ji W L, Xue H. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch[J]. J. Semicond., 2011, 32(12): 124006. doi: 10.1088/1674-4926/32/12/124006.
      Export: BibTex EndNote

      Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

      doi: 10.1088/1674-4926/32/12/124006
      Funds:

      the National Natural Science Foundation of China

      • Received Date: 2015-08-20
      • Accepted Date: 2011-04-20
      • Revised Date: 2011-08-04
      • Published Date: 2011-11-23

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