| Citation: |
Li Weiping, Xu Jiangtao?, Xu Chao, Li Binqiao, Yao Suying. Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants[J]. Journal of Semiconductors, 2011, 32(12): 124008. doi: 10.1088/1674-4926/32/12/124008
Li W P, Xu J, Xu C, Li B Q, Yao S Y. Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants[J]. J. Semicond., 2011, 32(12): 124008. doi: 10.1088/1674-4926/32/12/124008.
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Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants
doi: 10.1088/1674-4926/32/12/124008
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Abstract
In order to increase collection efficiency and eliminate image lag, multi n-type implants were introduced into the process of a pinned-photodiode. For the purpose of improving the collection efficiency, multi n-type implants with different implant energies were proposed, which expanded the vertical collection region. To reduce the image lag, a horizontal gradient doping concentration eliminating the potential barrier was also formed by multi n-type implants. The simulation result shows that the collection efficiency can be improved by about 10% in the long wavelength range and the density of the residual charge is reduced from 2.59 × 109 to 2.62 × 107 cm-3.-
Keywords:
- CMOS image sensor,
- photodiode,
- collection efficiency,
- charge transfer,
- image lag
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] -
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