SEMICONDUCTOR MATERIALS

X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures

Wang Yuanzhang, Li Jinchai, Li Shuping, Chen Hangyang, Liu Dayi and Kang Junyong

+ Author Affiliations

PDF

Abstract: The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown AlxGa1-xN/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer. The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction (x=0.25) and thin well width has a rather smooth surface for the Rrms of AFM data value is 0.45 nm.

Key words: metalorganic chemical vapor depositioninterfacessurfacesnitridessuperlatticeshigh resolution X-ray diffraction原子力显微镜

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4773 Times PDF downloads: 1898 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 18 November 2010 Online: Published: 01 April 2011

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wang Yuanzhang, Li Jinchai, Li Shuping, Chen Hangyang, Liu Dayi, Kang Junyong. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures[J]. Journal of Semiconductors, 2011, 32(4): 043006. doi: 10.1088/1674-4926/32/4/043006 Wang Y Z, Li J C, Li S P, Chen H Y, Liu D Y, Kang J Y. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures[J]. J. Semicond., 2011, 32(4): 043006. doi: 10.1088/1674-4926/32/4/043006.Export: BibTex EndNote
      Citation:
      Wang Yuanzhang, Li Jinchai, Li Shuping, Chen Hangyang, Liu Dayi, Kang Junyong. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures[J]. Journal of Semiconductors, 2011, 32(4): 043006. doi: 10.1088/1674-4926/32/4/043006

      Wang Y Z, Li J C, Li S P, Chen H Y, Liu D Y, Kang J Y. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures[J]. J. Semicond., 2011, 32(4): 043006. doi: 10.1088/1674-4926/32/4/043006.
      Export: BibTex EndNote

      X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures

      doi: 10.1088/1674-4926/32/4/043006
      • Received Date: 2015-08-18
      • Accepted Date: 2010-09-14
      • Revised Date: 2010-11-18
      • Published Date: 2011-03-22

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return