| Citation: |
Li Jin, Liu Hongxia, Yuan Bo, Cao Lei, Li Bin. A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs[J]. Journal of Semiconductors, 2011, 32(4): 044005. doi: 10.1088/1674-4926/32/4/044005
Li J, Liu H X, Yuan B, Cao L, Li B. A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs[J]. J. Semicond., 2011, 32(4): 044005. doi: 10.1088/1674-4926/32/4/044005.
Export: BibTex EndNote
|
A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs
doi: 10.1088/1674-4926/32/4/044005
-
Abstract
On the basis of the exact resultant solution of two dimensional Poisson's equations, a new accurate two-dimensional analytical model comprising surface channel potentials, a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator. Besides offering a physical insight into device physics, the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.-
Keywords:
- dual material gate
-
References
-
Proportional views
DownLoad: