SEMICONDUCTOR INTEGRATED CIRCUITS

A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference

Yan Wei, Li Wenhong and Liu Ran

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Abstract: A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 0.35-μm 3.3-V/5-V dual gate mixed-signal CMOS process. The proposed circuit generates a precise sub-bandgap voltage of 1 V. The temperature coefficient of the output voltage is 13.4 ppm/℃ with the temperature varying from –20 to 80 ℃. The proposed circuit operates properly with the supply voltage down to 1.3 V, and consumes 150 nA at room temperature. The line regulation is 0.27%/V. The power supply rejection ratio at 100 Hz and 1 MHz is –39 dB and –51 dB, respectively. The chip area is 0.2 mm2.

Key words: nanopower

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    Received: 18 August 2015 Revised: 26 October 2010 Online: Published: 01 April 2011

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      Yan Wei, Li Wenhong, Liu Ran. A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference[J]. Journal of Semiconductors, 2011, 32(4): 045011. doi: 10.1088/1674-4926/32/4/045011 Yan W, Li W H, Liu R. A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference[J]. J. Semicond., 2011, 32(4): 045011. doi: 10.1088/1674-4926/32/4/045011.Export: BibTex EndNote
      Citation:
      Yan Wei, Li Wenhong, Liu Ran. A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference[J]. Journal of Semiconductors, 2011, 32(4): 045011. doi: 10.1088/1674-4926/32/4/045011

      Yan W, Li W H, Liu R. A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference[J]. J. Semicond., 2011, 32(4): 045011. doi: 10.1088/1674-4926/32/4/045011.
      Export: BibTex EndNote

      A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference

      doi: 10.1088/1674-4926/32/4/045011
      • Received Date: 2015-08-18
      • Accepted Date: 2010-09-07
      • Revised Date: 2010-10-26
      • Published Date: 2011-03-22

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