| Citation: |
Zhang Manhong, Huo Zongliang, Wang Qin, Liu Ming. Material properties and effective work function of reactive sputtered TaN gate electrodes[J]. Journal of Semiconductors, 2011, 32(5): 053005. doi: 10.1088/1674-4926/32/5/053005
Zhang M H, Huo Z L, Wang Q, Liu M. Material properties and effective work function of reactive sputtered TaN gate electrodes[J]. J. Semicond., 2011, 32(5): 053005. doi: 10.1088/1674-4926/32/5/053005.
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Material properties and effective work function of reactive sputtered TaN gate electrodes
doi: 10.1088/1674-4926/32/5/053005
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Abstract
The resistivity, crystalline structure and effective work function (EWF) of reactive sputtered TaN has been investigated. As-deposited TaN films have an fcc structure. After post-metal annealing (PMA) at 900 ℃, the TaN films deposited with a N2 flow rate greater than 6.5 sccm keep their fcc structure, while the films deposited with a N2 flow rate lower than 6.25 sccm exhibit a microstructure change. The flatband voltages of gate stacks with TaN films as gate electrodes on SiO2 and HfO2 are also measured. It is concluded that a dipole is formed at the dielectric-TaN interface and its contribution to the EWF of TaN changes with the Ta/N ratio in TaN, the underneath dielectric layer and the PMA conditions.-
Keywords:
- metal gate
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References
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Proportional views
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