SEMICONDUCTOR INTEGRATED CIRCUITS

A dual-mode 6–9 GHz transmitter for OFDM-UWB

Chen Yunfeng, Gao Ting, Li Wei, Li Ning and Ren Junyan

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Abstract: This paper presents a fully integrated dual-mode 6 to 9 GHz transmitter for both WiMedia and China MB-OFDM UWB applications. The proposed transmitter consists of a dual-mode I/Q LPF, an up-conversion mixer, a two-stage power driver amplifier and a broadband high-speed frequency divider with LO buffers for I/Q LO carrier generation. The measurement results show that the gain ripple of the transmitter is within ±1.5/± 2.8 dB from 6 to 8.7/9 GHz. The output IP3 is about +13.2 dBm, the output 1dBCP is around +2.8 dBm, and the LO leakage/sideband rejection ratio is about –35/–38 dBc. The ESD protected chip is fabricated with a TSMC 0.13 μm RFCMOS process with a die size of 1.6 × 1.3 mm2 and the core circuit consumes only 46 mA under a 1.2 V supply.

Key words: dual-mode

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    Received: 18 August 2015 Revised: 18 January 2011 Online: Published: 01 May 2011

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      Chen Yunfeng, Gao Ting, Li Wei, Li Ning, Ren Junyan. A dual-mode 6–9 GHz transmitter for OFDM-UWB[J]. Journal of Semiconductors, 2011, 32(5): 055004. doi: 10.1088/1674-4926/32/5/055004 Chen Y F, Gao T, Li W, Li N, Ren J Y. A dual-mode 6–9 GHz transmitter for OFDM-UWB[J]. J. Semicond., 2011, 32(5): 055004. doi: 10.1088/1674-4926/32/5/055004.Export: BibTex EndNote
      Citation:
      Chen Yunfeng, Gao Ting, Li Wei, Li Ning, Ren Junyan. A dual-mode 6–9 GHz transmitter for OFDM-UWB[J]. Journal of Semiconductors, 2011, 32(5): 055004. doi: 10.1088/1674-4926/32/5/055004

      Chen Y F, Gao T, Li W, Li N, Ren J Y. A dual-mode 6–9 GHz transmitter for OFDM-UWB[J]. J. Semicond., 2011, 32(5): 055004. doi: 10.1088/1674-4926/32/5/055004.
      Export: BibTex EndNote

      A dual-mode 6–9 GHz transmitter for OFDM-UWB

      doi: 10.1088/1674-4926/32/5/055004
      • Received Date: 2015-08-18
      • Accepted Date: 2010-10-13
      • Revised Date: 2011-01-18
      • Published Date: 2011-04-21

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