SEMICONDUCTOR INTEGRATED CIRCUITS

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

Xie Yuanbin, Quan Si, Ma Xiaohua, Zhang Jincheng, Li Qingmin and Hao Yue

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Abstract: Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate. E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7 V, a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V. The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs.

Key words: AlGaN/GaN

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    Received: 18 August 2015 Revised: 30 January 2011 Online: Published: 01 June 2011

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      Xie Yuanbin, Quan Si, Ma Xiaohua, Zhang Jincheng, Li Qingmin, Hao Yue. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment[J]. Journal of Semiconductors, 2011, 32(6): 065001. doi: 10.1088/1674-4926/32/6/065001 Xie Y B, Quan S, Ma X H, Zhang J C, Li Q M, Hao Y. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment[J]. J. Semicond., 2011, 32(6): 065001. doi: 10.1088/1674-4926/32/6/065001.Export: BibTex EndNote
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      Xie Yuanbin, Quan Si, Ma Xiaohua, Zhang Jincheng, Li Qingmin, Hao Yue. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment[J]. Journal of Semiconductors, 2011, 32(6): 065001. doi: 10.1088/1674-4926/32/6/065001

      Xie Y B, Quan S, Ma X H, Zhang J C, Li Q M, Hao Y. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment[J]. J. Semicond., 2011, 32(6): 065001. doi: 10.1088/1674-4926/32/6/065001.
      Export: BibTex EndNote

      Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

      doi: 10.1088/1674-4926/32/6/065001
      • Received Date: 2015-08-18
      • Accepted Date: 2010-11-30
      • Revised Date: 2011-01-30
      • Published Date: 2011-05-23

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