| Citation: |
Wei Yiqun, Lin Xinnan, Jia Yuchao, Cui Xiaole, Zhang Xing, Song Zhitang. Contact size scaling of a W-contact phase-change memory cell based on numerical simulation[J]. Journal of Semiconductors, 2012, 33(10): 104006. doi: 10.1088/1674-4926/33/10/104006
Wei Y Q, Lin X N, Jia Y C, Cui X L, Zhang X, Song Z T. Contact size scaling of a W-contact phase-change memory cell based on numerical simulation[J]. J. Semicond., 2012, 33(10): 104006. doi: 10.1088/1674-4926/33/10/104006.
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Contact size scaling of a W-contact phase-change memory cell based on numerical simulation
doi: 10.1088/1674-4926/33/10/104006
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Abstract
In the design of phase-change memory (PCM), it is important to perform numerical simulations to predict the performances of different device structures. This work presents a numerical simulation using a coupled system including Poisson's equation, the current continuity equation, the thermal conductivity equation, and phase-change dynamics to simulate the thermal and electric characteristics of phase-change memory. This method discriminates the common numerical simulation of PCM cells, from which it applies Possion's equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells, which is more adoptable for the semiconductor characteristics of phase-change materials. The results show that the simulation agrees with the measurement, and the scalability of PCM is predicted.-
Keywords:
- phase-change memory
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] -
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