SEMICONDUCTOR TECHNOLOGY

Key process study in nanoimprint lithography

Wang Zhihao, Liu Wen, Wang Lei, Zuo Qiang and Zhao Yanli

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Abstract: Nanoimprint lithography (NIL) is widely used in the fabrication of nano-scale semiconductor devices for its advantages of high resolution, low cost, and high throughput. However, traditional hard stamp imprinting has some drawbacks such as short stamp lifetime, bad uniformity in big areas, and large particle influence. In this paper, a flexible intermediate polymer stamp (IPS) is proposed to solve the drawbacks mentioned above. Meanwhile, we use a method of temperature-pressure variation imprinting to improve the resist liquidity in the process of imprinting, and eventually we achieve high quality patterns. This method combined with IPS has been used to fabricate a high quality grating whose half pitch is 50 nm.

Key words: nanoimprint lithography

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    Received: 20 August 2015 Revised: 08 June 2012 Online: Published: 01 October 2012

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      Wang Zhihao, Liu Wen, Wang Lei, Zuo Qiang, Zhao Yanli. Key process study in nanoimprint lithography[J]. Journal of Semiconductors, 2012, 33(10): 106002. doi: 10.1088/1674-4926/33/10/106002 Wang Z H, Liu W, Wang L, Zuo Q, Zhao Y L. Key process study in nanoimprint lithography[J]. J. Semicond., 2012, 33(10): 106002. doi: 10.1088/1674-4926/33/10/106002.Export: BibTex EndNote
      Citation:
      Wang Zhihao, Liu Wen, Wang Lei, Zuo Qiang, Zhao Yanli. Key process study in nanoimprint lithography[J]. Journal of Semiconductors, 2012, 33(10): 106002. doi: 10.1088/1674-4926/33/10/106002

      Wang Z H, Liu W, Wang L, Zuo Q, Zhao Y L. Key process study in nanoimprint lithography[J]. J. Semicond., 2012, 33(10): 106002. doi: 10.1088/1674-4926/33/10/106002.
      Export: BibTex EndNote

      Key process study in nanoimprint lithography

      doi: 10.1088/1674-4926/33/10/106002
      Funds:

      The National High Technology Research and Development Program of China (863 Program)

      • Received Date: 2015-08-20
      • Accepted Date: 2012-03-31
      • Revised Date: 2012-06-08
      • Published Date: 2012-09-10

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