| Citation: |
S. Das, A. K. Panda, G. N. Dash. Characterization of electrical properties of AlGaN/GaN interface using coupled Schrödinger and Poisson equation[J]. Journal of Semiconductors, 2012, 33(11): 113001. doi: 10.1088/1674-4926/33/11/113001
S. Das, A. K. Panda, G. N. Dash. Characterization of electrical properties of AlGaN/GaN interface using coupled Schrödinger and Poisson equation[J]. J. Semicond., 2012, 33(11): 113001. doi: 10.1088/1674-4926/33/11/113001.
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Characterization of electrical properties of AlGaN/GaN interface using coupled Schrödinger and Poisson equation
doi: 10.1088/1674-4926/33/11/113001
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Abstract
The electrical characterization of AlGaN/GaN interface is reported. The dependence of two-dimensional electron gas (2-DEG) density at the interface on the Al mole fraction and thickness of AlGaN layer as well as on the thickness of GaN cap layer is presented. This information can be used to design and fabricate AlGaN/GaN based MODFET (modulation doped field effect transistor) for optimum DC and RF characteristics.-
Keywords:
- MODFET,
- 2-DEG,
- polarization,
- critical thickness,
- self-heating
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] -
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