| Citation: |
Chen Weizhong, Zhang Bo, Li Zehong, Ren Min, Li Zhaoji. A new short-anoded IGBT with high emission efficiency[J]. Journal of Semiconductors, 2012, 33(11): 114003. doi: 10.1088/1674-4926/33/11/114003
Chen W Z, Zhang B, Li Z H, Ren M, Li Z J. A new short-anoded IGBT with high emission efficiency[J]. J. Semicond., 2012, 33(11): 114003. doi: 10.1088/1674-4926/33/11/114003.
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A new short-anoded IGBT with high emission efficiency
doi: 10.1088/1674-4926/33/11/114003
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Abstract
A novel short-anoded insulated-gate bipolar transistor (SA-IGBT) with double emitters is proposed. At the on-state, the new structure shows extraordinarily high emission efficiency. Moreover, with a short-contacted anode, it further enhances the hole emission efficiency because of the crowding of the electrons. The forward voltage drop VF of this structure is 1.74 V at a current density 100 of A/cm2. Compared to the conventional NPT IGBT (1.94 V), segment-anode IGBT (SA-NPN 2.1 V), and conventional SA-IGBT (2.33 V), VF decreased by 10%, 17% and 30%, respectively. Furthermore, no NDR has been detected comparing to the SA-IGBT. At the off-state, there is a channel for extracting excessive carriers in the drift region. The turn-off loss Eoff of this proposed structure is 8.64 mJ/cm2. Compared to the conventional NPT IGBT (15.3 mJ/cm2), SA-NPN IGBT (12.8 mJ/cm2), and SA-IGBT (12.1 mJ/cm2), Eoff decreased by 43.7%, 32% and 28%, respectively. -
References
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