| Citation: |
Chen Hongtao, Ding Jianfeng, Yang Lin. 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator[J]. Journal of Semiconductors, 2012, 33(11): 114005. doi: 10.1088/1674-4926/33/11/114005
Chen H T, Ding J F, Yang L. 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator[J]. J. Semicond., 2012, 33(11): 114005. doi: 10.1088/1674-4926/33/11/114005.
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12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator
doi: 10.1088/1674-4926/33/11/114005
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Abstract
We demonstrate a 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator. Under a non-return-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V, the eye is clearly opened with an extinction ratio of 8.4 dB. The device exhibits high modulation efficiency, with a figure of merit VπL of 0.036 V·mm.-
Keywords:
- optical modulator
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] -
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