SEMICONDUCTOR MATERIALS

N+P photodetector characterization using the quasi-steady state photoconductance decay method

Omeime Xerviar Esebamen

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Abstract: When a material is irradiated, it becomes more electrically conductive due to the absorption of the electromagnetic radiation. As a result, the number of free electrons and holes changes and raises its electrical conductivity. A simple but interesting phenomenon to characterise a fabricated n+p photodetector in order to determine its linearity (photoresponse) and photoconductance was employed. Using the transient decay when the irradiation source is switched off, the minority carrier concentration, effective lifetime and surface recombination velocity present at the surface of the detector were measured.

Key words: photoconductance decayphotodetector characterizationminority carrier lifetimesurface recombination velocity

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    Received: 03 December 2014 Revised: 14 February 2012 Online: Published: 01 December 2012

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      Omeime Xerviar Esebamen. N+P photodetector characterization using the quasi-steady state photoconductance decay method[J]. Journal of Semiconductors, 2012, 33(12): 123002. doi: 10.1088/1674-4926/33/12/123002 O X Esebamen. N+P photodetector characterization using the quasi-steady state photoconductance decay method[J]. J. Semicond., 2012, 33(12): 123002. doi:  10.1088/1674-4926/33/12/123002.Export: BibTex EndNote
      Citation:
      Omeime Xerviar Esebamen. N+P photodetector characterization using the quasi-steady state photoconductance decay method[J]. Journal of Semiconductors, 2012, 33(12): 123002. doi: 10.1088/1674-4926/33/12/123002

      O X Esebamen. N+P photodetector characterization using the quasi-steady state photoconductance decay method[J]. J. Semicond., 2012, 33(12): 123002. doi:  10.1088/1674-4926/33/12/123002.
      Export: BibTex EndNote

      N+P photodetector characterization using the quasi-steady state photoconductance decay method

      doi: 10.1088/1674-4926/33/12/123002
      • Received Date: 2014-12-03
      • Accepted Date: 2012-01-19
      • Revised Date: 2012-02-14
      • Published Date: 2012-11-13

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