SEMICONDUCTOR PHYSICS

Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation

Wu Xinkun, Liu Wei, Cheng Shuying, Lai Yunfeng and Jia Hongjie

+ Author Affiliations

PDF

Abstract: Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature, and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 ℃ for 3 h. Fabricated CZTS thin films were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, ultraviolet-visible-near infrared spectrophotometry, the Hall effect system, and 3D optical microscopy. The experimental results show that, when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15, the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm-1 in the energy range 1.5-3.5 eV, and a direct band gap of about 1.47 eV. The carrier concentration, resistivity and mobility of the CZTS film are 6.98 × 1016 cm-3, 6.96 Ω·cm, and 12.9 cm2/(V.s), respectively and the conduction type is p-type. Therefore, the CZTS thin films are suitable for absorption layers of solar cells.

Key words: Cu2ZnSnS4

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4026 Times PDF downloads: 4262 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: 06 September 2011 Online: Published: 01 February 2012

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wu Xinkun, Liu Wei, Cheng Shuying, Lai Yunfeng, Jia Hongjie. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation[J]. Journal of Semiconductors, 2012, 33(2): 022002. doi: 10.1088/1674-4926/33/2/022002 Wu X K, Liu W, Cheng S Y, Lai Y F, Jia H J. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation[J]. J. Semicond., 2012, 33(2): 022002. doi: 10.1088/1674-4926/33/2/022002.Export: BibTex EndNote
      Citation:
      Wu Xinkun, Liu Wei, Cheng Shuying, Lai Yunfeng, Jia Hongjie. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation[J]. Journal of Semiconductors, 2012, 33(2): 022002. doi: 10.1088/1674-4926/33/2/022002

      Wu X K, Liu W, Cheng S Y, Lai Y F, Jia H J. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation[J]. J. Semicond., 2012, 33(2): 022002. doi: 10.1088/1674-4926/33/2/022002.
      Export: BibTex EndNote

      Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation

      doi: 10.1088/1674-4926/33/2/022002
      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-07-20
      • Revised Date: 2011-09-06
      • Published Date: 2012-01-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return