| Citation: |
Cui Min, Chen Nuofu, Yang Xiaoli, Zhang Han. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. Journal of Semiconductors, 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006
Cui M, Chen N F, Yang X L, Zhang H. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. J. Semicond., 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006.
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Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell
doi: 10.1088/1674-4926/33/2/024006
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Abstract
GaInP/GaAs/Ge tandem solar cells were fabricated by a MOCVD technique. The photoelectric properties of the solar cells were characterized by a current-voltage test method. The dependence of the solar cell's characteristics on temperature were investigated from 30 to 170 ℃ at intervals of 20 ℃. Test results indicated that with increasing temperature, Jsc of the cell increased slightly with a temperature coefficient of 9.8 (μA/cm2)/℃. Voc reduced sharply with a coefficient of -5.6 mV/℃. FF was reduced with a temperature coefficient of -0.00063/℃. Furthermore, the conversion efficiency decreased linearly with increasing temperature which decreased from 28% at 30 ℃ to 22.1% at 130 ℃. Also, detailed theoretical analyses for temperature characteristics of the solar cell were given. -
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