| Citation: |
Z. Hamaizia, N. Sengouga, M. C. E. Yagoub, M. Missous. S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT[J]. Journal of Semiconductors, 2012, 33(2): 025001. doi: 10.1088/1674-4926/33/2/025001
Z Hamaizia, N Sengouga, M C E Yagoub, M Missous. S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT[J]. J. Semicond., 2012, 33(2): 025001. doi: 10.1088/1674-4926/33/2/025001.
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S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT
doi: 10.1088/1674-4926/33/2/025001
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Abstract
This paper discusses the design of a wideband low noise amplifier (LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications. The LNA design is based on a novel ultra-low noise InGaAs/InAlAs/InP pHEMT. Linear and non-linear modelling of this pHEMT has been used to design an LNA operating from 2 to 4 GHz. A common-drain in cascade with a common source inductive degeneration, broadband LNA topology is proposed for wideband applications. The proposed configuration achieved a maximum gain of 27 dB and a noise figure of 0.3 dB with a good input and output return loss (S11 < -10 dB, S22 < -11 dB). This LNA exhibits an input 1-dB compression point of -18 dBm, a third order input intercept point of 0 dBm and consumes 85 mW of power from a 1.8 V supply. -
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