SEMICONDUCTOR INTEGRATED CIRCUITS

A sub-1 V high-precision CMOS bandgap voltage reference

Liao Jun, Zhao Yiqiang and Geng Junfeng

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Abstract: A third-order, sub-1 V bandgap voltage reference design for low-power supply, high-precision applications is presented. This design uses a current-mode compensation technique and temperature-dependent resistor ratio to obtain high-order curvature compensation. The circuit was designed and fabricated by SMIC 0.18 μm CMOS technology. It produces an output reference of 713.6 mV. The temperature coefficient is 3.235 ppm/℃ in the temperature range of -40 to 120 ℃, with a line regulation of 0.199 mV/V when the supply voltage varies from 0.95 to 3 V. The average current consumption of the whole circuit is 49 μA at the supply voltage of 1 V.

Key words: bandgap referencecurvature compensationlow power supplylow temperature coefficient

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    Received: 18 August 2015 Revised: Online: Published: 01 February 2012

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      Liao Jun, Zhao Yiqiang, Geng Junfeng. A sub-1 V high-precision CMOS bandgap voltage reference[J]. Journal of Semiconductors, 2012, 33(2): 025014. doi: 10.1088/1674-4926/33/2/025014 Liao J, Zhao Y Q, Geng J F. A sub-1 V high-precision CMOS bandgap voltage reference[J]. J. Semicond., 2012, 33(2): 025014. doi: 10.1088/1674-4926/33/2/025014.Export: BibTex EndNote
      Citation:
      Liao Jun, Zhao Yiqiang, Geng Junfeng. A sub-1 V high-precision CMOS bandgap voltage reference[J]. Journal of Semiconductors, 2012, 33(2): 025014. doi: 10.1088/1674-4926/33/2/025014

      Liao J, Zhao Y Q, Geng J F. A sub-1 V high-precision CMOS bandgap voltage reference[J]. J. Semicond., 2012, 33(2): 025014. doi: 10.1088/1674-4926/33/2/025014.
      Export: BibTex EndNote

      A sub-1 V high-precision CMOS bandgap voltage reference

      doi: 10.1088/1674-4926/33/2/025014
      • Received Date: 2015-08-18
      • Published Date: 2012-01-20

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