| Citation: |
Li Ye, Jiang Tingting, Sun Qingqing, Wang Pengfei, Ding Shijin, Zhang Wei. Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation[J]. Journal of Semiconductors, 2012, 33(3): 032001. doi: 10.1088/1674-4926/33/3/032001
Li Y, Jiang T T, Sun Q Q, Wang P F, Ding S J, Zhang W. Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation[J]. J. Semicond., 2012, 33(3): 032001. doi: 10.1088/1674-4926/33/3/032001.
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Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
doi: 10.1088/1674-4926/33/3/032001
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Abstract
HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2. A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing. The composition, the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment. With a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV.-
Keywords:
- atomic layer deposition
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] -
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