| Citation: |
Wang Riyan, Huang Jiwei, Li Zhengping, Zhang Weifeng, Zeng Longyue. A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver[J]. Journal of Semiconductors, 2012, 33(3): 035005. doi: 10.1088/1674-4926/33/3/035005
Wang R Y, Huang J W, Li Z P, Zhang W F, Zeng L Y. A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver[J]. J. Semicond., 2012, 33(3): 035005. doi: 10.1088/1674-4926/33/3/035005.
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A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver
doi: 10.1088/1674-4926/33/3/035005
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Abstract
A CMOS RF front-end for the long-term evolution (LTE) direct conversion receiver is presented. With a low noise transconductance amplifier (LNA), current commutating passive mixer and transimpedance operational amplifier (TIA), the RF front-end structure enables high-integration, high linearity and simple frequency planning for LTE multi-band applications. Large variable gain is achieved using current-steering transconductance stages. A current commutating passive mixer with 25% duty-cycle LO improves gain, noise and linearity. A direct coupled current-input filter (DCF) is employed to suppress the out-of-band interferer. Fabricated in a 0.13-μm CMOS process, the RF front-end achieves a 45 dB conversion voltage gain, 2.7 dB NF, -7 dBm IIP3, and +60 dBm IIP2 with calibration from 2.3 to 2.7 GHz. The total RF front end with divider draws 40 mA from a single 1.2-V supply.-
Keywords:
- RF CMOS,
- front-end,
- passive mixer,
- 25% duty-cycle,
- variable gain,
- quadrature demodulator,
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] -
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