J. Semicond. > 2012, Volume 33 > Issue 4 > 044006, doi: 10.1088/1674-4926/33/4/044006
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High-temperature (T=80℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser

Zhang Yu, Wang Yongbin, Xu Yingqiang, Xu Yun, Niu Zhichuan and Song Guofeng

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Abstract: An InGaSb/AlGaAsSb compressively strained quantum well laser emitting at 2 μm has been fabricated. An output power of 82.2 mW was obtained in continuous wave (CW) mode at room temperature. The laser can operate at high temperature (T=80℃), with a maximum output power of 63.7 mW in CW mode.

Key words: InGaSb/AlGaAsSb, laser, high-temperature operation

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    Received: 20 August 2015 Revised: 26 October 2011 Online: Published: 01 April 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(4): 044006
      Zhang Yu, Wang Yongbin, Xu Yingqiang, Xu Yun, Niu Zhichuan, Song Guofeng. High-temperature (T=80℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser[J]. Journal of Semiconductors, 2012, 33(4): 044006. doi: 10.1088/1674-4926/33/4/044006 Zhang Y, Wang Y B, Xu Y Q, Xu Y, Niu Z C, Song G F. High-temperature (T=80℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser[J]. J. Semicond., 2012, 33(4): 044006. doi: 10.1088/1674-4926/33/4/044006.Export: BibTex EndNote
      Citation:
      Zhang Yu, Wang Yongbin, Xu Yingqiang, Xu Yun, Niu Zhichuan, Song Guofeng. High-temperature (T=80℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser[J]. Journal of Semiconductors, 2012, 33(4): 044006. doi: 10.1088/1674-4926/33/4/044006

      Zhang Y, Wang Y B, Xu Y Q, Xu Y, Niu Z C, Song G F. High-temperature (T=80℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser[J]. J. Semicond., 2012, 33(4): 044006. doi: 10.1088/1674-4926/33/4/044006.
      Export: BibTex EndNote
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      High-temperature (T=80℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser

      doi: 10.1088/1674-4926/33/4/044006

      • Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,National Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,National Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Beijing Natural Science Foundation under Grant No. 4112058（Study of material growth and grating fabrication of GaSb-based distributed feedback laser diode for ultra-high sensitivity gas sensing）

      • Received Date: 2015-08-20
      • Accepted Date: 2011-09-28
      • Revised Date: 2011-10-26
      • Published Date: 2012-03-23

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