| Citation: |
Jiang Yibo, Du Huan, Zeng Chuanbin, Han Zhengsheng. ESD protection design for the gate oxide of an RF-LDMOS[J]. Journal of Semiconductors, 2012, 33(4): 044007. doi: 10.1088/1674-4926/33/4/044007
Jiang Y B, Du H, Zeng C B, Han Z S. ESD protection design for the gate oxide of an RF-LDMOS[J]. J. Semicond., 2012, 33(4): 044007. doi: 10.1088/1674-4926/33/4/044007.
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ESD protection design for the gate oxide of an RF-LDMOS
doi: 10.1088/1674-4926/33/4/044007
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Abstract
This paper presents the investigation of integrated electro-static discharge (ESD) protection design for the gate oxide of an RF-LDMOS (radio frequency lateral double diffusion MOS). Through a comprehensive discussion of experimental and simulated results, a cascoded NMOS is presented as appropriate integrated gate oxide ESD protection with a high holding voltage and a flexible ESD design window.-
Keywords:
- cascoded NMOS
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References
[1] [2] [3] [4] [5] [6] [7] [8] -
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