SEMICONDUCTOR MATERIALS

Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency

Guo Hongying, Sun Yuanping, Yong-Hoon Cho, Eun-Kyung Suh, Hai-Joon Lee, Rak-Jun Choi and Yoon-Bong Hahn

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Abstract: Phase separations have been studied for graded-indium content InxGa1-xN/GaN multiple quantum wells (MQWs) with different indium contents by means of photoluminescence (PL), cathodeluminescence (CL) and time-resolved PL (TRPL) techniques. Besides the main emission peaks, all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K. CL images show a clear contrast for 3 samples, which indicates an increasing phase separation with increasing indium content. TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content, which means a carrier transferring from low indium content structures to high indium content structures.

Key words: carrier transferphase separationgraded-indium contentmultiple quantum wells

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    Received: 20 August 2015 Revised: 04 December 2011 Online: Published: 01 May 2012

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      Guo Hongying, Sun Yuanping, Yong-Hoon Cho, Eun-Kyung Suh, Hai-Joon Lee, Rak-Jun Choi, Yoon-Bong Hahn. Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency[J]. Journal of Semiconductors, 2012, 33(5): 053001. doi: 10.1088/1674-4926/33/5/053001 Guo H Y, Sun Y P, Y H Cho, E K Suh, H J Lee, R J Choi, Y B Hahn. Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency[J]. J. Semicond., 2012, 33(5): 053001. doi:  10.1088/1674-4926/33/5/053001.Export: BibTex EndNote
      Citation:
      Guo Hongying, Sun Yuanping, Yong-Hoon Cho, Eun-Kyung Suh, Hai-Joon Lee, Rak-Jun Choi, Yoon-Bong Hahn. Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency[J]. Journal of Semiconductors, 2012, 33(5): 053001. doi: 10.1088/1674-4926/33/5/053001

      Guo H Y, Sun Y P, Y H Cho, E K Suh, H J Lee, R J Choi, Y B Hahn. Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency[J]. J. Semicond., 2012, 33(5): 053001. doi:  10.1088/1674-4926/33/5/053001.
      Export: BibTex EndNote

      Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency

      doi: 10.1088/1674-4926/33/5/053001
      • Received Date: 2015-08-20
      • Accepted Date: 2011-11-15
      • Revised Date: 2011-12-04
      • Published Date: 2012-04-11

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