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Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

Fang Yulong, Dun Shaobo, Liu Bo, Yin Jiayun, Cai Shujun and Feng Zhihong

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Abstract: Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed. The electric field applied was found to be the extrinsic cause for the device instability, while the traps were recognized as the main intrinsic factor. The effect of the traps on the device degradation was identified by recovery experiments and pulsed I-V measurements. The total degradation of the devices consists of two parts: recoverable degradation and unrecoverable degradation. The electric field induced traps combined with the inherent ones in the device bulk are mainly responsible for the recoverable degradation.

Key words: AlGaN/GaN HEMTs

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    Received: 20 August 2015 Revised: 29 January 2012 Online: Published: 01 May 2012

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      Fang Yulong, Dun Shaobo, Liu Bo, Yin Jiayun, Cai Shujun, Feng Zhihong. Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2012, 33(5): 054005. doi: 10.1088/1674-4926/33/5/054005 Fang Y L, Dun S B, Liu B, Yin J Y, Cai S J, Feng Z H. Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors[J]. J. Semicond., 2012, 33(5): 054005. doi: 10.1088/1674-4926/33/5/054005.Export: BibTex EndNote
      Citation:
      Fang Yulong, Dun Shaobo, Liu Bo, Yin Jiayun, Cai Shujun, Feng Zhihong. Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2012, 33(5): 054005. doi: 10.1088/1674-4926/33/5/054005

      Fang Y L, Dun S B, Liu B, Yin J Y, Cai S J, Feng Z H. Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors[J]. J. Semicond., 2012, 33(5): 054005. doi: 10.1088/1674-4926/33/5/054005.
      Export: BibTex EndNote

      Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

      doi: 10.1088/1674-4926/33/5/054005
      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-11-02
      • Revised Date: 2012-01-29
      • Published Date: 2012-04-11

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