| Citation: |
Xiao Wenbo, He Xingdao, Gao Yiqing, Zhang Zhimin, Liu Jiangtao. Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias[J]. Journal of Semiconductors, 2012, 33(6): 064008. doi: 10.1088/1674-4926/33/6/064008
Xiao W B, He X D, Gao Y Q, Zhang Z M, Liu J T. Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias[J]. J. Semicond., 2012, 33(6): 064008. doi: 10.1088/1674-4926/33/6/064008.
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Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias
doi: 10.1088/1674-4926/33/6/064008
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Abstract
The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions. An electroluminescence viewgraph shows the clear device structures, and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current. The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells. The good fit between the measured and calculated data proves the above conclusions. This work is of guiding significance for current solar cell testing and research. -
References
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