| Citation: |
Luo Wei, Xie Jing, Zhang Yang, Li Chaobo, Xia Yang. Anodic bonding using a hybrid electrode with a two-step bonding process[J]. Journal of Semiconductors, 2012, 33(6): 066001. doi: 10.1088/1674-4926/33/6/066001
Luo W, Xie J, Zhang Y, Li C B, Xia Y. Anodic bonding using a hybrid electrode with a two-step bonding process[J]. J. Semicond., 2012, 33(6): 066001. doi: 10.1088/1674-4926/33/6/066001.
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Anodic bonding using a hybrid electrode with a two-step bonding process
doi: 10.1088/1674-4926/33/6/066001
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Abstract
A two-step bonding process using a novel hybrid electrode is presented. The effects of different electrodes on bonding time, bond strength and the bonded interface are analyzed. The anodic bonding is studied using a domestic bonding system, which carries out a detailed analysis of the integrity of the bonded interface and the bond strength measurement. With the aid of the hybrid electrode, a bubble-free anodic bonding process could be accomplished within 15-20 min, with a shear strength in excess of 10 MPa. These results show that the proposed method has a high degree of application value, including in most wafer-level MEMS packaging.-
Keywords:
- wafer bonding
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
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