| Citation: |
Zhang Xiaojie, Yang Ruixia, Wang Jinghui. Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer[J]. Journal of Semiconductors, 2012, 33(7): 074008. doi: 10.1088/1674-4926/33/7/074008
Zhang X J, Yang R X, Wang J H. Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer[J]. J. Semicond., 2012, 33(7): 074008. doi: 10.1088/1674-4926/33/7/074008.
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Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer
doi: 10.1088/1674-4926/33/7/074008
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Abstract
The light output power of an InGaN/GaN light-emitting diode is improved by using a SiO2/TiO2 distributed Bragg reflector (DBR) and an Al mirror as a hybrid reflective current blocking layer (CBL). Such a hybrid reflective CBL not only plays the role of the CBL by enhancing current spreading but also plays the role of a reflector by preventing photons near the p-electrode pad from being absorbed by a metal electrode. At a wavelength of 455 nm, a 1.5-pair of SiO2/TiO2 DBR and an Al mirror (i.e. 1.5-pair DBR+Al) deposited on a p-GaN layer showed a normal-incidence reflectivity as high as 97.8%. With 20 mA current injection, it was found that the output power was 25.26, 24.45, 23.58 and 22.45 mW for the LED with a 1.5-pair DBR+Al CBL, a 3-pair DBR CBL, SiO2 CBL and without a CBL, respectively.-
Keywords:
- distributed Bragg reflector
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References
[1] [2] [3] [4] [5] [6] [7] [8] -
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