| Citation: |
Ge Liang, Hu Cheng, Zhu Zhiwei, Zhang Wei, Wu Dongping, Zhang Shili. Influence of surface preparation on atomic layer deposition of Pt films[J]. Journal of Semiconductors, 2012, 33(8): 083003. doi: 10.1088/1674-4926/33/8/083003
Ge L, Hu C, Zhu Z W, Zhang W, Wu D P, Zhang S L. Influence of surface preparation on atomic layer deposition of Pt films[J]. J. Semicond., 2012, 33(8): 083003. doi: 10.1088/1674-4926/33/8/083003.
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Influence of surface preparation on atomic layer deposition of Pt films
doi: 10.1088/1674-4926/33/8/083003
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Abstract
We report Pt deposition on a Si substrate by means of atomic layer deposition (ALD) using (methylcyclopentadienyl) trimethylplatinum (CH3C5H4Pt(CH3)3) and O2. Silicon substrates with both HF-last and oxide-last surface treatments are employed to investigate the influence of surface preparation on Pt-ALD. A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate. An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing. A plausible explanation to the observed difference of Pt-ALD is discussed. -
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