| Citation: |
Cui Ning, Liang Renrong, Wang Jing, Zhou Wei, Xu Jun. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. Journal of Semiconductors, 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004
Cui N, Liang R R, Wang J, Zhou W, Xu J. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. J. Semicond., 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004.
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A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics
doi: 10.1088/1674-4926/33/8/084004
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Abstract
A PNPN tunnel field effect transistor (TFET) with a high-k gate dielectric and a low-k fringe dielectric is introduced. The effects of the gate and fringe electric fields on the TFET's performance were investigated through two-dimensional simulations. The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel, while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability. The TFET device with the proposed structure has good switching characteristics, enhanced on-state current, and high process tolerance. It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.-
Keywords:
- TFET
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References
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