| Citation: |
Zhang Junyu, Wang Yong, Liu Jing, Zhang Manhong, Xu Zhongguang, Huo Zongliang, Liu Ming. A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications[J]. Journal of Semiconductors, 2012, 33(8): 084006. doi: 10.1088/1674-4926/33/8/084006
Zhang J Y, Wang Y, Liu J, Zhang M H, Xu Z G, Huo Z L, Liu M. A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications[J]. J. Semicond., 2012, 33(8): 084006. doi: 10.1088/1674-4926/33/8/084006.
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A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications
doi: 10.1088/1674-4926/33/8/084006
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Abstract
We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory (NVM) applications. By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme, both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor, the "erased states" can be set to below 0 V, so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified. Good memory cell performance has also been achieved, including a fast program/erase (P/E) speed (a 1.15 V memory window under 10 μs program pulse), an excellent data retention (only 20% charge loss for 10 years). The data shows that the device has strong potential for future embedded NVM applications.-
Keywords:
- P-channel,
- select transistor,
- nano-crystal memory,
- embedded
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] -
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