SEMICONDUCTOR PHYSICS

A tunneling piezoresistive model for polysilicon

Chuai Rongyan, Wang Jian, Wu Meile, Liu Xiaowei, Jin Xiaoshi and Yang Lijian

+ Author Affiliations

PDF

Abstract: Based on the trap model, the band structure and the conductive mechanism of polysilicon were analyzed, and then an equivalent circuit used to interpret the tunneling piezoresistive effect was proposed. Synthesizing the piezoresistive effect of the grain boundary region and grain neutral zone, a new piezoresistive model—a tunneling piezoresistive model is established. The results show that when the doping concentration is above 1020 cm-3, the piezoresistive coefficient of the grain boundary is higher than that of the neutral zone, and it increases with an increase in doping concentration. This reveals the intrinsic mechanism of an important experimental phenomena that the gauge factor of heavily doped polysilicon nano-films increases with an increase in doping concentration.

Key words: polysilicon nanofilmtunnelling piezoresistive effectGauge factorpiezoresistive properties

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3248 Times PDF downloads: 1514 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: 19 March 2012 Online: Published: 01 September 2012

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Chuai Rongyan, Wang Jian, Wu Meile, Liu Xiaowei, Jin Xiaoshi, Yang Lijian. A tunneling piezoresistive model for polysilicon[J]. Journal of Semiconductors, 2012, 33(9): 092003. doi: 10.1088/1674-4926/33/9/092003 Chuai R Y, Wang J, Wu M L, Liu X W, Jin X S, Yang L J. A tunneling piezoresistive model for polysilicon[J]. J. Semicond., 2012, 33(9): 092003. doi: 10.1088/1674-4926/33/9/092003.Export: BibTex EndNote
      Citation:
      Chuai Rongyan, Wang Jian, Wu Meile, Liu Xiaowei, Jin Xiaoshi, Yang Lijian. A tunneling piezoresistive model for polysilicon[J]. Journal of Semiconductors, 2012, 33(9): 092003. doi: 10.1088/1674-4926/33/9/092003

      Chuai R Y, Wang J, Wu M L, Liu X W, Jin X S, Yang L J. A tunneling piezoresistive model for polysilicon[J]. J. Semicond., 2012, 33(9): 092003. doi: 10.1088/1674-4926/33/9/092003.
      Export: BibTex EndNote

      A tunneling piezoresistive model for polysilicon

      doi: 10.1088/1674-4926/33/9/092003
      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2012-02-18
      • Revised Date: 2012-03-19
      • Published Date: 2012-08-21

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return