J. Semicond. > 2013, Volume 34 > Issue 1 > 014005, doi: 10.1088/1674-4926/34/1/014005
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SEMICONDUCTOR DEVICES

SPT+-IGBT characteristics and optimization

Weili Chu1, Yangjun Zhu1, 2, , Jie Zhang1, 2 and Aibin Hu1

+ Author Affiliations

 Corresponding author: Zhu Yangjun, Email:zhuyangjun@ime.ac.cn

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Abstract: A novel advanced soft punch through (SPT) IGBT signed as SPT+-IGBT is investigated. Static and dynamic characteristics are simulated based on the 1200 V device structure and adopted technology. Extensive research on the structure optimization of SPT+-IGBT is presented and discussed. Compared with the structure of conventional IGBT, SPT+-IGBT has a much lower collector-emitter saturation voltage and better switching characteristics. Therefore it is very suitable for applications blocking a voltage higher than 3000 V. In addition, due to the improvement of switching speed achieved by using a thinner chip, SPT+-IGBT is also very competitive in 1200 V and 1700 V applications.

Key words: IGBT, SPT+, field stop layer, carrier stored layer



[1]
Wu Y, Lu X H, Kang B W, et al. A novel low power loss IGBT(LPL-IGBT) and its simulation. Chinese Journal of Semiconductors, 2001, 22(12):1565(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX200112017.htm
[2]
Laska T, Miinzer M, Pfirsch F, et al. The field stop IGBT (FS IGBT)——a new power device concept with a great improvement potential. Proc ISPSD, 2000:355 http://ieeexplore.ieee.org/document/856842/
[3]
Rahimo M, Lukasch W, von Arx C, et al. Novel soft-punch-through (SPT) 1700 V IGBT sets benchmark on technology curve. Proc PCIM, Nuremberg, Germany, 2001 http://www.5scomponents.com/pdf/nu01mr_web.pdf
[4]
Vobeck J, Rahimo M, Kopta A, et al. Exploring the silicon design limits of thin wafer IGBT technology:the controlled punch through (CPT) IGBT. Proc ISPSD, 2008:76 http://neutron.ujf.cas.cz/vdg/LC06041/2008_Vobecky_1.pdf
[5]
Dewar S, Linder S, von Arx C, et al. Soft punch through (SPT)-setting new standards in 1200V IGBT. Proc PCIM, Nuremberg, Germany, 2000 http://www.5scomponents.com/pdf/nu00sd-web.pdf
[6]
Rahimo M, Kopta A, Schnell R, et al. 2.5 kV-6.5 kV industry standard IGBT modules setting a new benchmark in SOA capability. Proc PCIM, Nurnberg, Germany, 2004 http://www.5scomponents.com/pdf/2.5kv-6.5kv_industry_standard_igbt.pdf
Fig. 1.  Simulation results of the structures (a) the NPT, (b) the SPT, (c) the SPT$^{+}$-IGBT and the electric field.

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Fig. 2.  Chip thicknesses of the NPT, SPT and SPT$^{+}$-IGBT with different BV.

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Fig. 3.  $V_{\rm CE(sat)}$ of the SPT and SPT$^{+}$-IGBT with different BVs.

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Fig. 4.  Hole carrier density of the SPT and SPT$^{+}$-IGBT.

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Fig. 5.  Technology curve and relationship curve of $V_{\rm CE(sat)}$ and $t_{\rm f}$ of the NPT, SPT and SPT$^{+}$-IGBT.

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Fig. 6.  $V_{\rm CE(sat)}$ and BV of the SPT$^{+}$-IGBT with different carrier store layer doses.

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Fig. 7.  $V_{\rm CE(sat)}$ and BV of the SPT$^{+}$-IGBT with different diffusion times.

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[1]
Wu Y, Lu X H, Kang B W, et al. A novel low power loss IGBT(LPL-IGBT) and its simulation. Chinese Journal of Semiconductors, 2001, 22(12):1565(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX200112017.htm
[2]
Laska T, Miinzer M, Pfirsch F, et al. The field stop IGBT (FS IGBT)——a new power device concept with a great improvement potential. Proc ISPSD, 2000:355 http://ieeexplore.ieee.org/document/856842/
[3]
Rahimo M, Lukasch W, von Arx C, et al. Novel soft-punch-through (SPT) 1700 V IGBT sets benchmark on technology curve. Proc PCIM, Nuremberg, Germany, 2001 http://www.5scomponents.com/pdf/nu01mr_web.pdf
[4]
Vobeck J, Rahimo M, Kopta A, et al. Exploring the silicon design limits of thin wafer IGBT technology:the controlled punch through (CPT) IGBT. Proc ISPSD, 2008:76 http://neutron.ujf.cas.cz/vdg/LC06041/2008_Vobecky_1.pdf
[5]
Dewar S, Linder S, von Arx C, et al. Soft punch through (SPT)-setting new standards in 1200V IGBT. Proc PCIM, Nuremberg, Germany, 2000 http://www.5scomponents.com/pdf/nu00sd-web.pdf
[6]
Rahimo M, Kopta A, Schnell R, et al. 2.5 kV-6.5 kV industry standard IGBT modules setting a new benchmark in SOA capability. Proc PCIM, Nurnberg, Germany, 2004 http://www.5scomponents.com/pdf/2.5kv-6.5kv_industry_standard_igbt.pdf

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    Received: 29 May 2012 Revised: 23 July 2012 Online: Published: 01 January 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(1): 014005
      Weili Chu, Yangjun Zhu, Jie Zhang, Aibin Hu. SPT+-IGBT characteristics and optimization[J]. Journal of Semiconductors, 2013, 34(1): 014005. doi: 10.1088/1674-4926/34/1/014005 W L Chu, Y J Zhu, J Zhang, A B Hu. SPT+-IGBT characteristics and optimization[J]. J. Semicond., 2013, 34(1): 014005. doi: 10.1088/1674-4926/34/1/014005.Export: BibTex EndNote
      Citation:
      Weili Chu, Yangjun Zhu, Jie Zhang, Aibin Hu. SPT+-IGBT characteristics and optimization[J]. Journal of Semiconductors, 2013, 34(1): 014005. doi: 10.1088/1674-4926/34/1/014005

      W L Chu, Y J Zhu, J Zhang, A B Hu. SPT+-IGBT characteristics and optimization[J]. J. Semicond., 2013, 34(1): 014005. doi: 10.1088/1674-4926/34/1/014005.
      Export: BibTex EndNote
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      SPT+-IGBT characteristics and optimization

      doi: 10.1088/1674-4926/34/1/014005
      • 1.

        Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • 2.

        Jiangsu R & D Center for Internet of Things, Wuxi 214135, China

      Funds:

      the National Major Science and Technology Special Project of China 2011ZX02603-002

      the National Major Science and Technology Special Project of China 2011ZX02504-002

      Project supported by the National Major Science and Technology Special Project of China (Nos.2011ZX02504-002, 2011ZX02603-002)

      More Information
      • Corresponding author: Zhu Yangjun, Email:zhuyangjun@ime.ac.cn
      • Received Date: 2012-05-29
      • Revised Date: 2012-07-23
      • Published Date: 2013-01-01

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