Fig. 1.
Absorption coefficient of samples deposited with and without hydrogen plasma treatment
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Jingyan Li, Xiangbo Zeng, Hao Li, Xiaobing Xie, Ping Yang, Haibo Xiao, Xiaodong Zhang, Qiming Wang. Reduced defect density in microcrystalline silicon by hydrogen plasma treatment[J]. Journal of Semiconductors, 2013, 34(10): 103006. doi: 10.1088/1674-4926/34/10/103006
J Y Li, X B Zeng, H Li, X B Xie, P Yang, H B Xiao, X D Zhang, Q M Wang. Reduced defect density in microcrystalline silicon by hydrogen plasma treatment[J]. J. Semicond., 2013, 34(10): 103006. doi: 10.1088/1674-4926/34/10/103006.
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Reduced defect density in microcrystalline silicon by hydrogen plasma treatment
doi: 10.1088/1674-4926/34/10/103006
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Abstract
The effect of hydrogen plasma treatment (HPT) during the initial stage of microcrystalline silicon (μc-Si) growth on the defect density of μc-Si has been investigated. Lower absorption coefficient in the 0.8-1.0 eV indicated less defect density compared to its counterpart without HPT. The infrared spectroscopy of μc-Si with HPT shows an increase in 2040 cm-1, which reveals more Si-H in the amorphous/crystalline interfaces. We ascribe the decrease of defect density to hydrogen passivation of the dangling bonds. Improved performance of μc-Si solar cell with HPT is due to the reduced defect density. -
References
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