Citation: |
K Sivasankaran, P S Mallick. Stability performance of optimized symmetric DG-MOSFET[J]. Journal of Semiconductors, 2013, 34(10): 104001. doi: 10.1088/1674-4926/34/10/104001
K Sivasankaran, P S Mallick. Stability performance of optimized symmetric DG-MOSFET[J]. J. Semicond., 2013, 34(10): 104001. doi: 10.1088/1674-4926/34/10/104001.
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Stability performance of optimized symmetric DG-MOSFET
doi: 10.1088/1674-4926/34/10/104001
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Abstract
This article presents the bias and geometry optimization procedure for the radio frequency (RF) stability performance of nanoscale symmetric double-gate metal-oxide semiconductor field-effect transistors (DG-MOSFETs). The stability model can provide hints for optimizing the DG-MOSFET under an RF range. The device parameters are extracted for different bias and geometry conditions through numerical simulation, and the RF figures of merit such as cut-off frequency (ft) and maximum oscillation frequency (fmax), along with stability factor, are calculated for an optimized structure. The proposed structure exhibits good RF stability performance.-
Keywords:
- DG-MOSFET,
- radio frequency,
- stability factor,
- numerical simulation
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References
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