SEMICONDUCTOR DEVICES

An integrated MEMS piezoresistive tri-axis accelerometer

Yongping Zhang1, 2, Changde He1, 2, Jiaqi Yu1, Chunhui Du2, Juanting Zhang1, Xiujian Chou1, 2 and Wendong Zhang1, 2,

+ Author Affiliations

 Corresponding author: Zhang Wendong, wdzhang@nuc.edu.cn

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Abstract: An integrated MEMS accelerometer has been designed and fabricated. The device, which is based on the piezoresistive effect, accomplishes the detection of three components of acceleration by using piezoresistors to compose three Wheatstone bridges that are sensitive to the only given orientation. The fabrication of the accelerometer is described, and the theory behind its operation developed. Experimental results on sensitivity, cross-axis-coupling degree, and linearity are presented. The sensitivity of X, Y and Z were 5.49 mV/g, 5.12 mV/g and 4.82 mV/g, respectively; the nonlinearity of X, Y and Z were 0.01%, 0.04% and 0.01%, respectively; the cross-axis-coupling factor of X axis to Y axis and Z axis are 0.119% and 2.26%; the cross-axis-coupling factor of Y axis to X axis and Z axis are 0.157% and 4.12%; the cross-axis-coupling factor of Z axis to X axis and Y axis are 0.511% and 0.938%. The measured performance indexes attain accurate vector-detection in practical applications, and even at a navigation level. In conclusion, the accelerometer is a highly integrated sensor.

Key words: accelerometerintegrationpiezoresistivetri-axisMEMS



[1]
Yazdi N, Ayazi F, Najafi K. Micromachined inertial sensors. Proc IEEE, 1998, 86(8):1640 doi: 10.1109/5.704269
[2]
Bao M. Micro mechanical transducers:pressure sensors, accelerometer and gyroscopes. Amsterdam:Elsevier, 2000:281 doi: 10.1002/9783527676330.ch14/summary
[3]
Wu R, Wen T. Silicon micro-acceleration sensor technologies. Instrument Technique and Sensor, 2007, (3):8 http://en.cnki.com.cn/Article_en/CJFDTotal-YBJS200703003.htm
[4]
Chen S, Xue C, Zhang W, et al. Fabrication and testing of a silicon-based piezoresistive two-axis accelerometer. Nanotechnology and Precision Engineering, 2008, 6(4):272 http://en.cnki.com.cn/Article_en/CJFDTOTAL-NMJM200804008.htm
[5]
Dong Peitao, Li Xinxin. Design, fabrication and characterization of high-performance monolithic triaxial piezoresistive high-g accelerometer. Chinese Journal of Semiconductors, 2007, 28(9):1482 doi: 10.1088/1674-4926/33/10/104005/meta
[6]
Kovacs G T A. Micromachined transducers sourcebook. Translated by Zhang Wendong. Beijing:Science Press, 2003:165(in Chinese)
[7]
Liu Chang. Foundations of MEMS. Translated by Huang Qing'an. Beijing:China Machine Press, 2007:146(in Chinese) http://ci.nii.ac.jp/ncid/BA77278681
[8]
Wang Yuemei. Theoretical mechanics. Beijing:China Machine Press, 2004:386
[9]
Liu Hongwen. Mechanics of materials. Beijing:Higher Education Press, 2004:138
[10]
Uamada K, Nishihara M, Shimada S. Nonlinearity of the piezoresistance effect of p-type silicon diffused layers. Electron Devices, 1982, 29(1):71 doi: 10.1109/T-ED.1982.20660
[11]
Wang Zhenyao. Microsystem design and fabrication. Beijing:Tsinghua University Press, 2008:161 doi: 10.1007/s00542-016-2830-6
Fig. 1.  Three-dimensional views of the accelerometer. (a) Full view. (b) Partial-section view.

Fig. 2.  (a) SEM of the accelerometer and (b) the drawing of partial beam enlargement.

Fig. 3.  Fabrication process.

Fig. 4.  Beams and mass, with a diagram of equivalent loads.

Fig. 5.  The stress contour on beam found by using ANSYS FEM soft-ware

Fig. 6.  The location of (a) 16 resistors and three Wheatstone bridges of (b) X-bridge, (c) Y -bridge, and (d) Z-bridge

Fig. 7.  Precision centrifuge testing. (a) Testing principle. (b) The centrifuge testing.

Fig. 8.  Output of three Wheatstone bridge versus the applied acceleration (a) ${\mathit{a}_\mathit{x}}$, (b) ${\mathit{a}_\mathit{y}}$, (c) ${\mathit{a}_\mathit{z}}$/the static respond of the accelerometer due to a series of ax, ay, and az.

Table 1.   Stress distribution on the four beams under X; Y and Z direction loads respectively.

Table 2.   The resistance change and corresponding bridge output under X; Y and Z direction loads, respectively

Table 3.   Characteristics of the accelerometer

[1]
Yazdi N, Ayazi F, Najafi K. Micromachined inertial sensors. Proc IEEE, 1998, 86(8):1640 doi: 10.1109/5.704269
[2]
Bao M. Micro mechanical transducers:pressure sensors, accelerometer and gyroscopes. Amsterdam:Elsevier, 2000:281 doi: 10.1002/9783527676330.ch14/summary
[3]
Wu R, Wen T. Silicon micro-acceleration sensor technologies. Instrument Technique and Sensor, 2007, (3):8 http://en.cnki.com.cn/Article_en/CJFDTotal-YBJS200703003.htm
[4]
Chen S, Xue C, Zhang W, et al. Fabrication and testing of a silicon-based piezoresistive two-axis accelerometer. Nanotechnology and Precision Engineering, 2008, 6(4):272 http://en.cnki.com.cn/Article_en/CJFDTOTAL-NMJM200804008.htm
[5]
Dong Peitao, Li Xinxin. Design, fabrication and characterization of high-performance monolithic triaxial piezoresistive high-g accelerometer. Chinese Journal of Semiconductors, 2007, 28(9):1482 doi: 10.1088/1674-4926/33/10/104005/meta
[6]
Kovacs G T A. Micromachined transducers sourcebook. Translated by Zhang Wendong. Beijing:Science Press, 2003:165(in Chinese)
[7]
Liu Chang. Foundations of MEMS. Translated by Huang Qing'an. Beijing:China Machine Press, 2007:146(in Chinese) http://ci.nii.ac.jp/ncid/BA77278681
[8]
Wang Yuemei. Theoretical mechanics. Beijing:China Machine Press, 2004:386
[9]
Liu Hongwen. Mechanics of materials. Beijing:Higher Education Press, 2004:138
[10]
Uamada K, Nishihara M, Shimada S. Nonlinearity of the piezoresistance effect of p-type silicon diffused layers. Electron Devices, 1982, 29(1):71 doi: 10.1109/T-ED.1982.20660
[11]
Wang Zhenyao. Microsystem design and fabrication. Beijing:Tsinghua University Press, 2008:161 doi: 10.1007/s00542-016-2830-6
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    Received: 12 May 2013 Revised: 04 July 2013 Online: Published: 01 October 2013

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      Yongping Zhang, Changde He, Jiaqi Yu, Chunhui Du, Juanting Zhang, Xiujian Chou, Wendong Zhang. An integrated MEMS piezoresistive tri-axis accelerometer[J]. Journal of Semiconductors, 2013, 34(10): 104009. doi: 10.1088/1674-4926/34/10/104009 Y P Zhang, C D He, J Q Yu, C H Du, J T Zhang, X J Chou, W D Zhang. An integrated MEMS piezoresistive tri-axis accelerometer[J]. J. Semicond., 2013, 34(10): 104009. doi: 10.1088/1674-4926/34/10/104009.Export: BibTex EndNote
      Citation:
      Yongping Zhang, Changde He, Jiaqi Yu, Chunhui Du, Juanting Zhang, Xiujian Chou, Wendong Zhang. An integrated MEMS piezoresistive tri-axis accelerometer[J]. Journal of Semiconductors, 2013, 34(10): 104009. doi: 10.1088/1674-4926/34/10/104009

      Y P Zhang, C D He, J Q Yu, C H Du, J T Zhang, X J Chou, W D Zhang. An integrated MEMS piezoresistive tri-axis accelerometer[J]. J. Semicond., 2013, 34(10): 104009. doi: 10.1088/1674-4926/34/10/104009.
      Export: BibTex EndNote

      An integrated MEMS piezoresistive tri-axis accelerometer

      doi: 10.1088/1674-4926/34/10/104009
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      Project supported by the National Science and Technology Cooperation Program of China (No. 61011140351)

      the National Science and Technology Cooperation Program of China 61011140351

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      • Corresponding author: Zhang Wendong, wdzhang@nuc.edu.cn
      • Received Date: 2013-05-12
      • Revised Date: 2013-07-04
      • Published Date: 2013-10-01

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