SEMICONDUCTOR DEVICES

The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device

Song Li, Chuanbin Zeng, Jiajun Luo and Zhengsheng Han

+ Author Affiliations

 Corresponding author: Li Song, Email:lisong@ime.ac.cn

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Abstract: The human body model (HBM) stress of a no-connect metal cover is tested to obtain the characteristics of abnormal electrostatic discharge, including current waveforms and peak current under varied stress voltage and device failure voltage. A new discharge model called the "sparkover-induced model" is proposed based on the results. Then, failure mechanism analysis and model simulation are performed to prove that the transient peak current caused by a sparkover of low arc impedance will result in the devices' premature damage when the potential difference between the no-connect metal cover and the chip exceeds the threshold voltage of sparkover.

Key words: electrostatic dischargehuman body modelno-connect metal coversparkover



[1]
Fang R, Wang J, Huang L, et al. The development of electronic packaging. Science & Technology Association Forum, 2012, (2):84
[2]
Inspection criteria for microelectronic packages and covers. JEDEC Solid State Technology Association, May 2011
[3]
MIL-STD-883H. Departments and Agencies of the Department of Defense, February 2010
[4]
ESDA/JEDEC joint standard for electrostatic discharge sensitivity testing-human body model (HBM)-component level. ESD Association & JEDEC Solid State Technology Association, November 2011
[5]
Wen Y L, Ming D K. Abnormal ESD failure mechanism in high-pin-count BGA packaged ICs due to stressing nonconnected balls. IEEE Trans Device Mater Reliab, 2004, 4(1):24 doi: 10.1109/TDMR.2004.824362
[6]
Kunz H, Duvvury C, Brodsky J, et al. HBM stress of no-connect IC pins and subsequent arc-over events that lead to human-metal-discharge-like events into unstressed neighbor pins. Electrical Overstress/Electrostatic Discharge Symposium, 2006 https://www.infona.pl/resource/bwmeta1.element.ieee-art-000005256807
[7]
Kaschani K T, Schimon M, Hofmann M, et al. ESD damage due to HBM stressing of non-connected pins. Electrical Overstress/Electrostatic Discharge Symposium, 2006 http://ieeexplore.ieee.org/document/5256806/keywords
[8]
ESD association technical report for the protection of electrostatic discharge susceptible items-human metal model (HMM). Electrostatic Discharge Association, 2009
[9]
IEC 61000-4-2: electromagnetic compatibility(emc)-part 4-2: testing and measurement techniques-electrostatic discharge immunity test. IEC International Standard, 2008
[10]
Field-induced charged-device model test method for electrostatic-discharge-withstand thresholds of microelectronic components. JEDEC Solid State Technology Association, December 2009
[11]
ESD association standard for electrostatic discharge sensitivity testing-charged device model (CDM)-component level. Electrostatic Discharge Association, July 2009
[12]
Muhonen K, Peachey N, Testin A. Human metal model (HMM) testing, challenges to using ESD guns. Electrical Overstress/Electrostatic Discharge Symposium, 2009 https://www.infona.pl/resource/bwmeta1.element.ieee-art-000005340100
[13]
Karp J, Kireev V, Tsaggaris D, et al. Effect of flip-chip package parameters on CDM discharge. Electrical Overstress/Electrostatic Discharge Symposium, 2008 http://ieeexplore.ieee.org/document/4772108/authors
Fig. 1.  A device using a CDIP with 20 pins and a no-connect metal cover.

Fig. 2.  Current waveforms with varied HBM stress on the no-connect metal cover.

Fig. 3.  Peak current through devices with varied $C_{\rm cover}$ and dimensions when stressed with a 3 kV HBM pulse. (The first spike was zoomed in for waveform details.)

Fig. 4.  "Sparkover-induced model" for failure analysis and simulation.

Fig. 5.  Simulation compared to the captured current waveform when stressed by a 3 kV HBM pulse.

Fig. 6.  Current through (a) $C_{\rm cover}$ and (b) $R_{\rm arc}$ in simulation.

Fig. 7.  The trend of $I_{\rm peak}$ versus.

Table 1.   Partial test results.

Table 2.   Test results and chip area of all tested samples.

[1]
Fang R, Wang J, Huang L, et al. The development of electronic packaging. Science & Technology Association Forum, 2012, (2):84
[2]
Inspection criteria for microelectronic packages and covers. JEDEC Solid State Technology Association, May 2011
[3]
MIL-STD-883H. Departments and Agencies of the Department of Defense, February 2010
[4]
ESDA/JEDEC joint standard for electrostatic discharge sensitivity testing-human body model (HBM)-component level. ESD Association & JEDEC Solid State Technology Association, November 2011
[5]
Wen Y L, Ming D K. Abnormal ESD failure mechanism in high-pin-count BGA packaged ICs due to stressing nonconnected balls. IEEE Trans Device Mater Reliab, 2004, 4(1):24 doi: 10.1109/TDMR.2004.824362
[6]
Kunz H, Duvvury C, Brodsky J, et al. HBM stress of no-connect IC pins and subsequent arc-over events that lead to human-metal-discharge-like events into unstressed neighbor pins. Electrical Overstress/Electrostatic Discharge Symposium, 2006 https://www.infona.pl/resource/bwmeta1.element.ieee-art-000005256807
[7]
Kaschani K T, Schimon M, Hofmann M, et al. ESD damage due to HBM stressing of non-connected pins. Electrical Overstress/Electrostatic Discharge Symposium, 2006 http://ieeexplore.ieee.org/document/5256806/keywords
[8]
ESD association technical report for the protection of electrostatic discharge susceptible items-human metal model (HMM). Electrostatic Discharge Association, 2009
[9]
IEC 61000-4-2: electromagnetic compatibility(emc)-part 4-2: testing and measurement techniques-electrostatic discharge immunity test. IEC International Standard, 2008
[10]
Field-induced charged-device model test method for electrostatic-discharge-withstand thresholds of microelectronic components. JEDEC Solid State Technology Association, December 2009
[11]
ESD association standard for electrostatic discharge sensitivity testing-charged device model (CDM)-component level. Electrostatic Discharge Association, July 2009
[12]
Muhonen K, Peachey N, Testin A. Human metal model (HMM) testing, challenges to using ESD guns. Electrical Overstress/Electrostatic Discharge Symposium, 2009 https://www.infona.pl/resource/bwmeta1.element.ieee-art-000005340100
[13]
Karp J, Kireev V, Tsaggaris D, et al. Effect of flip-chip package parameters on CDM discharge. Electrical Overstress/Electrostatic Discharge Symposium, 2008 http://ieeexplore.ieee.org/document/4772108/authors
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    Received: 07 January 2013 Revised: 22 March 2013 Online: Published: 01 August 2013

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      Song Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han. The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device[J]. Journal of Semiconductors, 2013, 34(8): 084007. doi: 10.1088/1674-4926/34/8/084007 S Li, C B Zeng, J J Luo, Z S Han. The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device[J]. J. Semicond., 2013, 34(8): 084007. doi: 10.1088/1674-4926/34/8/084007.Export: BibTex EndNote
      Citation:
      Song Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han. The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device[J]. Journal of Semiconductors, 2013, 34(8): 084007. doi: 10.1088/1674-4926/34/8/084007

      S Li, C B Zeng, J J Luo, Z S Han. The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device[J]. J. Semicond., 2013, 34(8): 084007. doi: 10.1088/1674-4926/34/8/084007.
      Export: BibTex EndNote

      The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device

      doi: 10.1088/1674-4926/34/8/084007
      Funds:

      he National Natural Science Foundation of China 60927006

      Project supported by the National Natural Science Foundation of China (No. 60927006)

      More Information
      • Corresponding author: Li Song, Email:lisong@ime.ac.cn
      • Received Date: 2013-01-07
      • Revised Date: 2013-03-22
      • Published Date: 2013-08-01

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