Fig. 1.
The structure of the AlGaN/GaN HEMT device.
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Chong Wang, Chong Chen, Yunlong He, Xuefeng Zheng, Xiaohua Ma, Jincheng Zhang, Wei Mao, Yue Hao. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2014, 35(1): 014008. doi: 10.1088/1674-4926/35/1/014008
C Wang, C Chen, Y L He, X F Zheng, X H Ma, J C Zhang, W Mao, Y Hao. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs[J]. J. Semicond., 2014, 35(1): 014008. doi: 10.1088/1674-4926/35/1/014008.
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Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs
doi: 10.1088/1674-4926/35/1/014008
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Abstract
The breakdown and the current collapse characteristics of high electron mobility transistors (HEMTs) with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly. Through analysis of the Schottky characteristics of the devices with different F-plasma treatment times, it was found that an optimal F-plasma treatment time of 120 s obviously reduced the gate reverse leakage current and improved the breakdown voltage of the devices, but longer F-plasma treatment time than 120 s did not reduce gate reverse leakage current due to plasma damage. The current collapse characteristics of the HEMTs with F-plasma treatment were evaluated by dual pulse measurement at different bias voltages and no obvious deterioration of current collapse were found after low power F-plasma treatment. -
References
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