Fig. 1.
Formula of an FA/O chelating agent.
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Yan Li, Yuling Liu, Xinhuan Niu, Xiaofeng Bu, Hongbo Li, Jiying Tang, Shiyan Fan. Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration[J]. Journal of Semiconductors, 2014, 35(1): 016001. doi: 10.1088/1674-4926/35/1/016001
Y Li, Y L Liu, X H Niu, X F Bu, H B Li, J Y Tang, S Y Fan. Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration[J]. J. Semicond., 2014, 35(1): 016001. doi: 10.1088/1674-4926/35/1/016001.
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Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration
doi: 10.1088/1674-4926/35/1/016001
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Abstract
The mechanism of the FA/O chelating agent in the process of chemical mechanical polishing (CMP) is introduced. CMP is carried on a Φ300 mm copper film. The higher polishing rate and lower surface roughness are acquired due to the action of an FA/O chelating agent with an extremely strong chelating ability under the condition of low pressure and low abrasive concentration during the CMP process. According to the results of several kinds of additive interaction curves when the pressure is 13.78 kPa, flow rate is 150 mL/min, and the rotating speed is 55/60 rpm, it can be demonstrated that the FA/O chelating agent plays important role during the CMP process. -
References
[1] Pandija S, Roy D, Babu S V. Achievement of high planarization efficiency in CMP of copper at a reduced down pressure. Microelectron Eng, 2009, 86:367 doi: 10.1016/j.mee.2008.11.047[2] Zhang W, Lu X, Liu Y, et al. Inhibitors for organic phosphonic acid system abrasive free polishing of Cu. Appl Surf Sci, 2009, 255:4114 doi: 10.1016/j.apsusc.2008.10.096[3] Murata J, Sadakuni S, Okamoto T. Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst. J Cryst Growth, 2012, 349:83 doi: 10.1016/j.jcrysgro.2012.04.007[4] Ng D, Kulkarni M, Johnson J. Oxidation and removal mechanisms during chemical-mechanical planarization. Wear, 2007, 263:1477 doi: 10.1016/j.wear.2006.11.023[5] Oh S, Seok J. An integrated material removal model for silicon dioxide layers in chemical mechanical polishing processes. Wear, 2009, 266(7/8):839 doi: 10.1007/978-1-4614-4054-3_4[6] Zheng J P, Roy D. Electrochemical examination of surface films formed during chemical mechanical planarization of copper in acetic acid and dodecyl sulfate solutions. Thin Solid Films, 2009, 517(16):4587 doi: 10.1016/j.tsf.2009.03.063[7] Shattuck K G, Lin J Y, Cojocaru P. Characterization of phosphate electrolytes for use in Cu electrochemical mechanical planarization. Electrochemical Acta, 2008, 53:8211 doi: 10.1016/j.electacta.2008.05.077[8] Yang J C, Oh D W, Lee G W, et al. Step height removal mechanism of chemical mechanical planarization (CMP) for sub-nano-surface finish. Wear, 2010, 268(3/4):505 http://ma.ecsdl.org/content/MA2012-02/29/2500.full.pdf -
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