SEMICONDUCTOR DEVICES

The total dose effects on the 1/f noise of deep submicron CMOS transistors

Rongbin Hu1, , Yuxin Wang1 and Wu Lu2

+ Author Affiliations

 Corresponding author: Hu Rongbin, hujiafu2000@126.com

PDF

Abstract: Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion.

Key words: total doseradiation1/f noiseCMOS



[1]
Kauppila, Bhuva A V, Loveless B L, et al. Effect of negative bias temperature instability on the single event upset response of 40 nm flip-flops. IEEE Trans Nucl Sci, 2012, 59(6):2651 doi: 10.1109/TNS.2012.2224136
[2]
Cui Jiangwei, Xue Yaoguo, Yu Xuefeng, et al. Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs. Journal of Semiconductors, 2012, 33(1):014006 doi: 10.1088/1674-4926/33/1/014006
[3]
Bu Jianhui, Bi Jinshun, Liu Mengxin, et al. A total dose radiation model for deep submicron PDSOI NMOS. Journal of Semiconductors, 2011, 32(1):014002 doi: 10.1088/1674-4926/32/1/014002
[4]
Gao Bo, Yu Xuefeng, Ren Diyuan, et al. Total dose ionizing irradiation effects on a static random access memory field programmable gate array. Journal of Semiconductors, 2012, 33(3):034007 doi: 10.1088/1674-4926/33/3/034007
[5]
Liu MengXin, Han Zhengsheng, Li Duoli, et al. A total dose radiation hardened PDSOI CMOS 3-line to 8-line decoder. Journal of Semiconductors, 2008, 29(6):1036 doi: 10.1088/1674-4926/35/6/064007/meta
[6]
Ding Lili, Yao Zhibin, Guo Hongxia, et al. Worst-case total dose radiation effect in deep-submicron SRAM circuits. Journal of Semiconductors, 2012, 33(7):075010 doi: 10.1088/1674-4926/33/7/075010
[7]
Guo Tianlei, Zhao Fazhan, Liu Gang, et al. Total dose radiation hardened PDSOI CMOS 64k SRAMs. Chinese Journal of Semiconductors, 2007, 28(8):1184 doi: 10.1088/1674-4926/35/2/024006/meta
[8]
Hiemstra D M. Dose rate and total dose dependence of the 1/f noise performance of an operational amplifier fabricated on a complimentary bipolar process on bonded wafer. IEEE Radiation Effects Data Workshop, 1998:111 http://ieeexplore.ieee.org/document/731488/
[9]
Fleetwood D M, Meisenheimer T L, Scofield J H. 1/f noise and radiation effects in MOS devices. IEEE Trans Electron Devices, 1994, 41:1953 doi: 10.1109/16.333811
[10]
Binkley D M, Hopper C E, Cressler J D, et al. Noise performance of 0.35-μm SOI CMOS devices and micropower preamplifier following 63-MeV, 1 Mrad (Si) proton irradiation. IEEE Trans Nucl Sci, 2004, 51:3788 doi: 10.1109/TNS.2004.839151
[11]
Peterson D G. Noise performance of transistors. IRE Trans Electron Devices, 1962, Ed-9:296 http://ieeexplore.ieee.org/document/1473214/authors
Fig. 1.  $I_{\rm D}$-$V_{\rm G}$ curves of NMOS transistor before and after radiation.

Fig. 2.  $I_{\rm D}$-$V_{\rm G}$ curves of PMOS transistors before and after radiation.

Fig. 3.  $I_{\rm G}$-$V_{\rm G}$ curves of NMOS transistors before and after radiation.

Fig. 4.  $I_{\rm D}$-$V_{\rm G}$ curves of PMOS transistors before and after radiation.

Fig. 5.  1/$f$ noise of an NMOS with $W/L=$ 20/1.2 before and after radiation.

Fig. 6.  1/$f$ noise of NMOS with $W/L=$ 20/0.18 before and after radiation.

Fig. 7.  1/$f$ noise of PMOS with $W/L=$ 20/1.2 before and after radiation.

Fig. 8.  1/$f$ noise of PMOS with $W/L=$ 20/0.18 before and after radiation.

Fig. 9.  The parasitic transistors.

Fig. 10.  $I_{\rm D}$-$V_{\rm G}$ curves before and after radiation for enclosed-gate NMOS transistors.

Fig. 11.  $I_{\rm G}$-$V_{\rm G}$ curves before and after radiation for enclosed-gate NMOS transistors.

Fig. 12.  1/$f$ noise powers before and after radiation for an NMOS with $W/L=$ 20/1.2.

Fig. 13.  1/$f$ noise powers before and after radiation for an NMOS with $W/L=$ 20/0.18.

Table 1.   Information about the research objects.

[1]
Kauppila, Bhuva A V, Loveless B L, et al. Effect of negative bias temperature instability on the single event upset response of 40 nm flip-flops. IEEE Trans Nucl Sci, 2012, 59(6):2651 doi: 10.1109/TNS.2012.2224136
[2]
Cui Jiangwei, Xue Yaoguo, Yu Xuefeng, et al. Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs. Journal of Semiconductors, 2012, 33(1):014006 doi: 10.1088/1674-4926/33/1/014006
[3]
Bu Jianhui, Bi Jinshun, Liu Mengxin, et al. A total dose radiation model for deep submicron PDSOI NMOS. Journal of Semiconductors, 2011, 32(1):014002 doi: 10.1088/1674-4926/32/1/014002
[4]
Gao Bo, Yu Xuefeng, Ren Diyuan, et al. Total dose ionizing irradiation effects on a static random access memory field programmable gate array. Journal of Semiconductors, 2012, 33(3):034007 doi: 10.1088/1674-4926/33/3/034007
[5]
Liu MengXin, Han Zhengsheng, Li Duoli, et al. A total dose radiation hardened PDSOI CMOS 3-line to 8-line decoder. Journal of Semiconductors, 2008, 29(6):1036 doi: 10.1088/1674-4926/35/6/064007/meta
[6]
Ding Lili, Yao Zhibin, Guo Hongxia, et al. Worst-case total dose radiation effect in deep-submicron SRAM circuits. Journal of Semiconductors, 2012, 33(7):075010 doi: 10.1088/1674-4926/33/7/075010
[7]
Guo Tianlei, Zhao Fazhan, Liu Gang, et al. Total dose radiation hardened PDSOI CMOS 64k SRAMs. Chinese Journal of Semiconductors, 2007, 28(8):1184 doi: 10.1088/1674-4926/35/2/024006/meta
[8]
Hiemstra D M. Dose rate and total dose dependence of the 1/f noise performance of an operational amplifier fabricated on a complimentary bipolar process on bonded wafer. IEEE Radiation Effects Data Workshop, 1998:111 http://ieeexplore.ieee.org/document/731488/
[9]
Fleetwood D M, Meisenheimer T L, Scofield J H. 1/f noise and radiation effects in MOS devices. IEEE Trans Electron Devices, 1994, 41:1953 doi: 10.1109/16.333811
[10]
Binkley D M, Hopper C E, Cressler J D, et al. Noise performance of 0.35-μm SOI CMOS devices and micropower preamplifier following 63-MeV, 1 Mrad (Si) proton irradiation. IEEE Trans Nucl Sci, 2004, 51:3788 doi: 10.1109/TNS.2004.839151
[11]
Peterson D G. Noise performance of transistors. IRE Trans Electron Devices, 1962, Ed-9:296 http://ieeexplore.ieee.org/document/1473214/authors
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2229 Times PDF downloads: 16 Times Cited by: 0 Times

    History

    Received: 07 July 2013 Revised: 23 August 2013 Online: Published: 01 February 2014

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Rongbin Hu, Yuxin Wang, Wu Lu. The total dose effects on the 1/f noise of deep submicron CMOS transistors[J]. Journal of Semiconductors, 2014, 35(2): 024006. doi: 10.1088/1674-4926/35/2/024006 R B Hu, Y X Wang, W Lu. The total dose effects on the 1/f noise of deep submicron CMOS transistors[J]. J. Semicond., 2014, 35(2): 024006. doi: 10.1088/1674-4926/35/2/024006.Export: BibTex EndNote
      Citation:
      Rongbin Hu, Yuxin Wang, Wu Lu. The total dose effects on the 1/f noise of deep submicron CMOS transistors[J]. Journal of Semiconductors, 2014, 35(2): 024006. doi: 10.1088/1674-4926/35/2/024006

      R B Hu, Y X Wang, W Lu. The total dose effects on the 1/f noise of deep submicron CMOS transistors[J]. J. Semicond., 2014, 35(2): 024006. doi: 10.1088/1674-4926/35/2/024006.
      Export: BibTex EndNote

      The total dose effects on the 1/f noise of deep submicron CMOS transistors

      doi: 10.1088/1674-4926/35/2/024006
      Funds:

      Project supported by the National Key Laboratory Foundations (No. 9140C090402110C0906)

      the National Key Laboratory Foundations 9140C090402110C0906

      More Information
      • Corresponding author: Hu Rongbin, hujiafu2000@126.com
      • Received Date: 2013-07-07
      • Revised Date: 2013-08-23
      • Published Date: 2014-02-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return