Fig. 1.
Simple tetragonal Brillouin zone for the superlattice. $\mathit{\Gamma }$ , $Z, A, R, X, M$ are special points in the Brillouin zone.
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Jian Li. Electronic structure of (InSb)m/(HgTe)n short period superlattices[J]. Journal of Semiconductors, 2014, 35(3): 032001. doi: 10.1088/1674-4926/35/3/032001
J Li. Electronic structure of (InSb)m/(HgTe)n short period superlattices[J]. J. Semicond., 2014, 35(3): 032001. doi: 10.1088/1674-4926/35/3/032001.
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Electronic structure of (InSb)m/(HgTe)n short period superlattices
doi: 10.1088/1674-4926/35/3/032001
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Abstract
The electronic structure of (InSb)m/(HgTe)n short period superlattices grown along the (001) direction is studied theoretically using norm-conserving pseudo-potentials together with the local-density approximation for the exchange-correlation potential. The band structure depends on the value of m and n, the number of mono-layers and on the ordering of atoms at the InSb/HgTe interface in one unit cell. Our calculation indicates that the superlattice can be a semiconductor having a band gap between the occupied and unoccupied bands, or a metal with no band gap at the Fermi energy.According to the further calculation of total charge density between (InSb)m/(HgTe)n with different structures, a clearly different behavior happens when the structure changes from a system with a gap and a system without a gap. -
References
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