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The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters

Xue Wu1, 2, 3, , Wu Lu1, 2, Yudong Li1, 2, 3, Qi Guo1, 2, Xin Wang1, 2, 3, Xingyao Zhang1, 2, 3, Xin Yu1, 2 and Wuying Ma1, 2, 3

+ Author Affiliations

 Corresponding author: Wu Xue, Email:xuew86@gmail.com

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Abstract: This paper presents the total ionizing dose test results at different biases and dose rates for AD9233, which is fabricated using a modern CMOS process. The experimental results show that the digital parts are more sensitive than the other parts. Power down is the worst-case bias, and this phenomenon is first found in the total ionizing dose effect of analog-to-digital converters. We also find that the AC as well as DC parameters are sensitive to the total ionizing dose at a high dose rate, whereas none of the parameters are sensitive at a low dose rate. The test facilities, results and analysis are presented in detail.

Key words: ionizing radiationanalog-to-digital converterdifferent biasesdose-rate effects



[1]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in 12-bit successive-approximation analog-to-digital converters. IEEE Workshop Record, Radiation Effects Data Workshop, 1993:112 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=700576
[2]
Turflinger T L, Davey M V, Bings J P. Radiation effects in analog CMOS analog-to-digital converters. IEEE Workshop Record, Radiation Effects Data Workshop, 1996:6 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=574182
[3]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in high resolution (12-/14-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1994, 41(6):2459 doi: 10.1109/23.340602
[4]
Lee C I, Rax B G, Johnston A H. Hardness assurance and testing techniques for high resolution (12 to 16-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1995, 42(6):1681 doi: 10.1109/23.488766
[5]
Black J D, Eaton P H, Chavez J R, et al. Total dose evaluation of state-of-the-art commercial analog to digital converters for space-based imaging applications. IEEE Work shop Record, Radiation Effects Data Workshop, 1998:121 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=731490
[6]
Guo Qi, Ren Diyuan, Fan Long, et al. Ionizing radiation effect of analog to digital converters. Nucl Tech, 1997, 20(1):753 http://www.en.cnki.com.cn/Article_en/CJFDTOTAL-HJSU701.005.htm
[7]
Wu Xue, Lu Wu, Wang Yiyuan, et al. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter. Journal of Semiconductors, 2013, 34(1):015006 doi: 10.1088/1674-4926/34/1/015006
[8]
Witczak S C, Lacoe R C, Osborn J V, et al. Dose rate sensitivity of modern nMOSFETs. IEEE Trans Nucl Sci, 2005, 52(6):2602 doi: 10.1109/TNS.2005.860709
[9]
Zebrev G I, Gorbunov M S. Modeling of radiation-induced leakage and low dose-rate effects in thick edge isolation of modern MOSFETs. IEEE Trans Nucl Sci, 2009, 56(4):2230 doi: 10.1109/TNS.2009.2016096
[10]
Faccio F, Cervelli G. Radiation-induced edge effects in deep submicron CMOS transistors. IEEE Nucl Plasma Sciences Soc, 2005, 52(6):2413 http://ieeexplore.ieee.org/document/1589217/
[11]
Liu Zhangli, Hu Zhenyuan, Zhang Zhengxuan, et al. Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET. Journal of Semiconductors, 2011, 32(6):064004 doi: 10.1088/1674-4926/32/6/064004
[12]
Faccio F, Barnaby H J, Chen X J, et al. Total ionizing dose effects in shallow trench isolation oxides. Microelectron Reliab, 2008, 48(7):1000 doi: 10.1016/j.microrel.2008.04.004
[13]
Barnaby H J. Total-ionizing-dose effects in modern CMOS technologies. IEEE Nucl Plasma Sci Soc, 2006, 53(6):3103 doi: 10.1109/TNS.2006.885952
[14]
Razavi B. Design of analog CMOS integrated circuits. New York:The McGraw-Hill Press, 2001
Fig. 1.  The relationship between the power-down current and the total dose under four conditions.

Fig. 2.  The relationship between INL and total dose under four conditions.

Fig. 3.  The relationship between SNR and total dose under four conditions.

Fig. 4.  The responses of the power-down current of the total dose and the annealing time under four conditions.

Fig. 5.  Schematic illustration of (a) intra-transistor leakage and (b) inter-device leakage.

Fig. 6.  Simple block diagram of a flash ADC.

Table 1.   Electrical test conditions.

Table 2.   Irradiation biases.

Table 3.   Other parameter results at pre-and post-irradiation, and room-temperature annealing.

[1]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in 12-bit successive-approximation analog-to-digital converters. IEEE Workshop Record, Radiation Effects Data Workshop, 1993:112 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=700576
[2]
Turflinger T L, Davey M V, Bings J P. Radiation effects in analog CMOS analog-to-digital converters. IEEE Workshop Record, Radiation Effects Data Workshop, 1996:6 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=574182
[3]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in high resolution (12-/14-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1994, 41(6):2459 doi: 10.1109/23.340602
[4]
Lee C I, Rax B G, Johnston A H. Hardness assurance and testing techniques for high resolution (12 to 16-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1995, 42(6):1681 doi: 10.1109/23.488766
[5]
Black J D, Eaton P H, Chavez J R, et al. Total dose evaluation of state-of-the-art commercial analog to digital converters for space-based imaging applications. IEEE Work shop Record, Radiation Effects Data Workshop, 1998:121 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=731490
[6]
Guo Qi, Ren Diyuan, Fan Long, et al. Ionizing radiation effect of analog to digital converters. Nucl Tech, 1997, 20(1):753 http://www.en.cnki.com.cn/Article_en/CJFDTOTAL-HJSU701.005.htm
[7]
Wu Xue, Lu Wu, Wang Yiyuan, et al. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter. Journal of Semiconductors, 2013, 34(1):015006 doi: 10.1088/1674-4926/34/1/015006
[8]
Witczak S C, Lacoe R C, Osborn J V, et al. Dose rate sensitivity of modern nMOSFETs. IEEE Trans Nucl Sci, 2005, 52(6):2602 doi: 10.1109/TNS.2005.860709
[9]
Zebrev G I, Gorbunov M S. Modeling of radiation-induced leakage and low dose-rate effects in thick edge isolation of modern MOSFETs. IEEE Trans Nucl Sci, 2009, 56(4):2230 doi: 10.1109/TNS.2009.2016096
[10]
Faccio F, Cervelli G. Radiation-induced edge effects in deep submicron CMOS transistors. IEEE Nucl Plasma Sciences Soc, 2005, 52(6):2413 http://ieeexplore.ieee.org/document/1589217/
[11]
Liu Zhangli, Hu Zhenyuan, Zhang Zhengxuan, et al. Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET. Journal of Semiconductors, 2011, 32(6):064004 doi: 10.1088/1674-4926/32/6/064004
[12]
Faccio F, Barnaby H J, Chen X J, et al. Total ionizing dose effects in shallow trench isolation oxides. Microelectron Reliab, 2008, 48(7):1000 doi: 10.1016/j.microrel.2008.04.004
[13]
Barnaby H J. Total-ionizing-dose effects in modern CMOS technologies. IEEE Nucl Plasma Sci Soc, 2006, 53(6):3103 doi: 10.1109/TNS.2006.885952
[14]
Razavi B. Design of analog CMOS integrated circuits. New York:The McGraw-Hill Press, 2001
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    Received: 25 September 2013 Revised: 01 November 2013 Online: Published: 01 April 2014

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      Xue Wu, Wu Lu, Yudong Li, Qi Guo, Xin Wang, Xingyao Zhang, Xin Yu, Wuying Ma. The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J]. Journal of Semiconductors, 2014, 35(4): 044008. doi: 10.1088/1674-4926/35/4/044008 X Wu, W Lu, Y D Li, Q Guo, X Wang, X Y Zhang, X Yu, W Y Ma. The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J]. J. Semicond., 2014, 35(4): 044008. doi: 10.1088/1674-4926/35/4/044008.Export: BibTex EndNote
      Citation:
      Xue Wu, Wu Lu, Yudong Li, Qi Guo, Xin Wang, Xingyao Zhang, Xin Yu, Wuying Ma. The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J]. Journal of Semiconductors, 2014, 35(4): 044008. doi: 10.1088/1674-4926/35/4/044008

      X Wu, W Lu, Y D Li, Q Guo, X Wang, X Y Zhang, X Yu, W Y Ma. The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J]. J. Semicond., 2014, 35(4): 044008. doi: 10.1088/1674-4926/35/4/044008.
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      The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters

      doi: 10.1088/1674-4926/35/4/044008
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      Project supported by the National Natural Science Foundation of China (No. 11005152)

      the National Natural Science Foundation of China 11005152

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      • Corresponding author: Wu Xue, Email:xuew86@gmail.com
      • Received Date: 2013-09-25
      • Revised Date: 2013-11-01
      • Published Date: 2014-04-01

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