SEMICONDUCTOR INTEGRATED CIRCUITS

Compact trimming design of a high-precision reference

Guodong Ren, Shifang Zhao, Zhongshen Pu and Zhiqiang Wei

+ Author Affiliations

 Corresponding author: Ren Guodong, Email:rengd@lut.cn

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Abstract: To design a high-precision reference, the various error sources have been analyzed and compensated with a compact 111 mV resistor-trim scheme and the upper and lower extremes of the reference precision are also temperature-compensated. At room temperature, the yield of ±0.5% precision is 96% and ±0.2% is 78%.

Key words: high-precisionerror sourcestrimtemperature-compensated



[1]
Basso C, Kadanka P. The TL431 in switch-mode power supplies loops:part Ⅰ. Electronic Design and Application World-Nikkei Electronics China, 2009, (3):99
[2]
Meijer G C, Wang G, Fruett F. Temperature sensors and voltage references implemented in COMS technology. IEEE J Sensors, 2001, 1(3):225 doi: 10.1109/JSEN.2001.954835
[3]
Palumbo G. Voltage references from diodes to precision high-order bandgap circuits. IEEE Circuits and Devices Magazine, 2002, 18(5):45 doi: 10.1109/MCD.2002.1035357
[4]
Song B S, Gray P R. A precision curvature-compensated CMOS bandgap reference. IEEE J Solid-State Circuits, 1983, 18(6):634 doi: 10.1109/JSSC.1983.1052013
[5]
Meijer G M, Fonderie C. A curvature-corrected low-voltage bandgap reference. IEEE J Solid-State Circuits, 1993, 28(6):667 doi: 10.1109/4.217981
[6]
Sheng Jinggang, Chen Zhiliang, Shi Bingxue. A CMOS bandgap reference with 1 V supply. Chinese Journal of Semiconductors, 2005, 26(4):826 https://www.researchgate.net/publication/293255783_CMOS_bandgap_reference_with_1V_supply
[7]
Xu Yong, Wang Zhigong, Guan Yu. Improved design of a bandgap voltage reference with high accuracy. Chinese Journal of Semiconductors, 2006, 27(12):2209 https://www.researchgate.net/publication/291296647_Improved_design_of_a_bandgap_voltage_reference_with_high_accuracy
[8]
Gupta V, Rincón-Mora G A. Predicting and designing for the impact of process variations and mismatch on the trim range and yield of bandgap reference. Quality of Electronic Design, 2005:503 http://dl.acm.org/citation.cfm?id=1049711&CFID=426924195&CFTOKEN=68355621
[9]
Hastings A. The art of analog layout. Beijing:Tsinghua University Press, 2004
[10]
Anderson B L, Anderson R L. Fundamentals of semiconductor devices. Beijing:Tsinghua University Press, 2006
[11]
Gupta V, Rincón-Mora G A. Predicting the effects of error sources in bandgap reference circuits and evaluating their design implications. Circuits and Systems, 2002, 3:575 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1187105
[12]
TLV431 Datasheet[c]. 2000-2005 Texas Instruments Incorporated
Fig. 1.  Bandgap reference circuit.

Fig. 2.  Total trimming voltage versus temperature.

Fig. 3.  Reference voltage versus temperature.

Fig. 4.  The binary-weighted series-connected resistor trim schemes using fuses.

Fig. 5.  CP value before adjusting.

Fig. 6.  CP value after adjusting.

Table 1.   The measured reference voltage.

[1]
Basso C, Kadanka P. The TL431 in switch-mode power supplies loops:part Ⅰ. Electronic Design and Application World-Nikkei Electronics China, 2009, (3):99
[2]
Meijer G C, Wang G, Fruett F. Temperature sensors and voltage references implemented in COMS technology. IEEE J Sensors, 2001, 1(3):225 doi: 10.1109/JSEN.2001.954835
[3]
Palumbo G. Voltage references from diodes to precision high-order bandgap circuits. IEEE Circuits and Devices Magazine, 2002, 18(5):45 doi: 10.1109/MCD.2002.1035357
[4]
Song B S, Gray P R. A precision curvature-compensated CMOS bandgap reference. IEEE J Solid-State Circuits, 1983, 18(6):634 doi: 10.1109/JSSC.1983.1052013
[5]
Meijer G M, Fonderie C. A curvature-corrected low-voltage bandgap reference. IEEE J Solid-State Circuits, 1993, 28(6):667 doi: 10.1109/4.217981
[6]
Sheng Jinggang, Chen Zhiliang, Shi Bingxue. A CMOS bandgap reference with 1 V supply. Chinese Journal of Semiconductors, 2005, 26(4):826 https://www.researchgate.net/publication/293255783_CMOS_bandgap_reference_with_1V_supply
[7]
Xu Yong, Wang Zhigong, Guan Yu. Improved design of a bandgap voltage reference with high accuracy. Chinese Journal of Semiconductors, 2006, 27(12):2209 https://www.researchgate.net/publication/291296647_Improved_design_of_a_bandgap_voltage_reference_with_high_accuracy
[8]
Gupta V, Rincón-Mora G A. Predicting and designing for the impact of process variations and mismatch on the trim range and yield of bandgap reference. Quality of Electronic Design, 2005:503 http://dl.acm.org/citation.cfm?id=1049711&CFID=426924195&CFTOKEN=68355621
[9]
Hastings A. The art of analog layout. Beijing:Tsinghua University Press, 2004
[10]
Anderson B L, Anderson R L. Fundamentals of semiconductor devices. Beijing:Tsinghua University Press, 2006
[11]
Gupta V, Rincón-Mora G A. Predicting the effects of error sources in bandgap reference circuits and evaluating their design implications. Circuits and Systems, 2002, 3:575 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1187105
[12]
TLV431 Datasheet[c]. 2000-2005 Texas Instruments Incorporated
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    Received: 25 September 2013 Revised: 16 November 2013 Online: Published: 01 April 2014

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      Guodong Ren, Shifang Zhao, Zhongshen Pu, Zhiqiang Wei. Compact trimming design of a high-precision reference[J]. Journal of Semiconductors, 2014, 35(4): 045008. doi: 10.1088/1674-4926/35/4/045008 G D Ren, S F Zhao, Z S Pu, Z Q Wei. Compact trimming design of a high-precision reference[J]. J. Semicond., 2014, 35(4): 045008. doi: 10.1088/1674-4926/35/4/045008.Export: BibTex EndNote
      Citation:
      Guodong Ren, Shifang Zhao, Zhongshen Pu, Zhiqiang Wei. Compact trimming design of a high-precision reference[J]. Journal of Semiconductors, 2014, 35(4): 045008. doi: 10.1088/1674-4926/35/4/045008

      G D Ren, S F Zhao, Z S Pu, Z Q Wei. Compact trimming design of a high-precision reference[J]. J. Semicond., 2014, 35(4): 045008. doi: 10.1088/1674-4926/35/4/045008.
      Export: BibTex EndNote

      Compact trimming design of a high-precision reference

      doi: 10.1088/1674-4926/35/4/045008
      Funds:

      the National Natural Science Foundation of China 61366006

      Project supported by the National Natural Science Foundation of China (Nos. 61366006, No.51261015) and the Natural Science Foundation of Gansu (No. 1308RJZA238)

      the National Natural Science Foundation of China 51261015

      the Natural Science Foundation of Gansu 1308RJZA238

      More Information
      • Corresponding author: Ren Guodong, Email:rengd@lut.cn
      • Received Date: 2013-09-25
      • Revised Date: 2013-11-16
      • Published Date: 2014-04-01

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