Fig. 1.
Schematic cross-sectional view of the back-illuminated AlGaN-based dual-band solar-blind PD
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Min Yang, Ming Chong, Degang Zhao, Xiaoyong Wang, Yanmei Su, Jie Sun, Xiuyan Sun. Back-illuminated AlxGa1-xN-based dual-band solar-blind ultraviolet photodetectors[J]. Journal of Semiconductors, 2014, 35(6): 064008. doi: 10.1088/1674-4926/35/6/064008
M Yang, M Chong, D G Zhao, X Y Wang, Y M Su, J Sun, X Y Sun. Back-illuminated AlxGa1-xN-based dual-band solar-blind ultraviolet photodetectors[J]. J. Semicond., 2014, 35(6): 064008. doi: 10.1088/1674-4926/35/6/064008.
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Back-illuminated AlxGa1-xN-based dual-band solar-blind ultraviolet photodetectors
doi: 10.1088/1674-4926/35/6/064008
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Abstract
Back-illuminated AlxGa1-xN-based dual-band solar-blind ultraviolet (UV) photodetectors (PDs) are realized by a three-terminal n-i-p-i-n heterojunction structure which is grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD). The two p-i-n junctions contained in the heterojunction structure can work separately and independently. Working in the photovoltaic mode, the PDs display peak responsivity of~10.8 mA/W at 242 nm and~5.0 mA/W at 257 nm, respectively. The two junctions with different size, whose diameters are 500 μm and 800 μm, exhibit almost the same leakage current of~1.3×10-9 A at a reverse bias of 10 V. Therefore, dark current densities of the two junctions are close to 6.6×10-7 A/cm2 and 2.6×10-7 A/cm2 at -10 V respectively. -
References
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