Fig. 1.
Schematic cross section of the conventional RC-IGBT.
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Liheng Zhu, Xingbi Chen. Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT[J]. Journal of Semiconductors, 2014, 35(6): 064009. doi: 10.1088/1674-4926/35/6/064009
L H Zhu, X B Chen. Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT[J]. J. Semicond., 2014, 35(6): 064009. doi: 10.1088/1674-4926/35/6/064009.
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Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT
doi: 10.1088/1674-4926/35/6/064009
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Abstract
A physically based equation for predicting required p-emitter length of a snapback-free reverse-conducting insulated gate bipolar transistor (RC-IGBT) with field-stop structure is proposed. The n-buffer resistances above the p-emitter region with anode geometries of linear strip, circular and annular type are calculated, and based on this, the minimum p-emitter lengths of those three geometries are given and verified by simulation. It is found that good agreement was achieved between the numerical calculation and simulation results. Moreover, the calculation results show that the annular case needs the shortest p-emitter length for RC-IGBT to be snapback-free. -
References
[1] Rahimo M, Schlapbach U, Schnell R, et al. Realization of higher output power capability with the bi-mode insulated gate transistor (BIGT). Proc EPE, 2009:1 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5279012[2] Donnellan B T, Mawby P A, Rahimo M, et al. Introducing a 1200 V vertical merged IGBT and power MOSFET:the HUBFET. APEC, 2012:152 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6165812[3] Minato T, Aono S, Uryu K, et al. Making a bridge from SJ-MOSFET to IGBT via RC-IGBT structure concept for 600 V class SJ-RC-IGBT in a single chip solution. Proc ISPSD, 2012:137 http://ieeexplore.ieee.org/document/6229042/citations[4] Zhang Wenliang, Tian Xiaoli, Tan Jingfei, et al. The snapback effect of an RC-IGBT and its simulations. Jounal of Semiconductors, 2013, 34(7):074007 doi: 10.1088/1674-4926/34/7/074007[5] Zhu Liheng, Chen Xingbi. Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor. Journal of Semiconductors, 2014, 35(7):0740 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=13092602&journal_id=bdtxbcn[6] Voss S, Niedernostheide F, Schulze H. Anode design variation in 1200-V trench field-stop reverse-conducting IGBTs. Proc ISPSD, 2008:169 http://www.docin.com/p-1257044913.html[7] Storasta L, Kopta A, Rahimo M. A compaison of charge dynamics in the reverse-conducting RC-IGBT and bi-mode insulated gate transistor BiGT. Proc ISPSD, 2010:391 http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=5544093[8] L Storasta, M Rahimo, M Bellini, et al. The radial layout design concept for the bi-mode insulated gate transistor. Proc ISPSD, 2011:56 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5890789[9] MEDICI. Two Dimensional Device Simulation Program, ed. 2002. 2. 0, Synopsys Inc. , Fremont, CA, 2002[10] Antoniou M, Udrea F, Bauer F, et al. A new way to alleviate the RC IGBT snapback phenomenon:the super junction solution. Proc ISPSD, 2010:153 http://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?reload=true&arnumber=5543970[11] Chen X, Zhang Q. Transistor theory and design. Publishing House of Electronics Industry, pp. 124[12] Valsamakis E A. Power dissipation calculation of the base spreading and contact resistance of transistors at low current and low frequencies. IEEE Trans Electron Devices, 1986, 33(2):303 doi: 10.1109/T-ED.1986.22483 -
Proportional views
