Fig. 1.
The dependence $\frac{G}{f}$ of Cu(In, Ga)Se$_{2}$ along the frequency is measured[25] and modeled.
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Changshi Liu. An analytic model to describe the relationship between conductance and frequency of heterojunction[J]. Journal of Semiconductors, 2015, 36(1): 012001. doi: 10.1088/1674-4926/36/1/012001
C S Liu. An analytic model to describe the relationship between conductance and frequency of heterojunction[J]. J. Semicond., 2015, 36(1): 012001. doi: 10.1088/1674-4926/36/1/012001.
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An analytic model to describe the relationship between conductance and frequency of heterojunction
doi: 10.1088/1674-4926/36/1/012001
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Abstract
The admittance measurements of a hetero-junction can be used to derive the density of the interfacial state in the hetero-junction. Hence, prediction conductance via frequency is very useful for comprehension of the admittance of a hetero-junction using a mathematical strategy. From the observations on the curve of the frequency-dependent conductance of the hetero-junction an analytic model with four-parameters was developed that relates conductance to frequency; the theoretical results agree quite well with the experimental data. The model shows potential for a variety of applications including different electronic devices. The model is a practical tool that can be readily used for assessing the electronic behaviors of a hetero-junction and is scientifically justifiable. In addition, the mathematical bridge to link the density of the interfacial state of the (pyronine-B)/p-Si structure to energy implies a good route to discuses the density of the interfacial state of interfaces.-
Keywords:
- conductance,
- frequency,
- predict,
- hetero-junction,
- density of interfacial state
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References
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