SEMICONDUCTOR DEVICES

GaN HEMT with AlGaN back barrier for high power MMIC switch application

Chunjiang Ren, Hongchang Shen, Zhonghui Li, Tangsheng Chen, Bin Zhang and Tao Gao

+ Author Affiliations

 Corresponding author: Chunjiang Ren, E-mail: rencj2010@sina.com

PDF

Abstract: 0.25 μm GaN HEMT with AlGaN back barrier for high power switch application has been presented. By introducing AlGaN back barrier, the buffer layer breakdown voltage for the metal-organic chemical vapor deposited AlGaN/GaN hetero-structure on 3-inch SiC substrate showed a considerable increment, which was nearly 4× and 2× of that for the conventional GaN buffer layer and GaN buffer layer with Fe doped, respectively. GaN switch HEMTs with source to drain spacing of 2, 2.5, 3, 3.5 and 4 μm were fabricated on the AlGaN/GaN epitaxial material with AlGaN back barrier and estimated off state power handling for the GaN switch HEMTs were 25.0, 46.2, 64.0, 79.2, and 88.4 W, respectively. A demonstrator DC-12 GHz GaN SPDT MMIC switch was designed in reflective series-shunt-shunt configuration based on the GaN HEMT, with a source to drain spacing of 2.5 μm. The developed SPDT MMIC switch showed a maximum insertion loss of 1.0 dB and a minimum isolation of 30 dB at a frequency range of DC-12 GHz. A power handling capability of 44.1 dBm was achieved at 10 GHz for the MMIC switch with continuous wave power compression measurement.

Key words: AlGaN/GaNHEMTback barrierMMIChigh powerswitch



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
Fig. 1.  A schematic cross section of the AlGaN/GaN heterostructure with AlGaN back barrier.

Fig. 2.  Designed 6 $\times$ 100 $\mu$m gate width GaN HEMT for characterization.

Fig. 3.  (a) Three and (b) two terminal breakdown voltage for the GaN switch HEMTs.

Fig. 4.  Frequency dependence of insertion loss and isolation for the 6 $\times$ 100 $\mu $m gate width GaN switch HEMT.

Fig. 5.  Insertion loss versus input power for the 6 $\times$ 100 $\mu $m gate width GaN switch HEMT at 10 GHz.

Fig. 6.  Electric circuit schematic for the designed SPDT MMIC switch.

Fig. 7.  Photograph of the GaN SPDT switch.

Fig. 8.  Measured small signal insertion loss and isolation results for the GaN SPDT switch.

Fig. 9.  CW power data for the GaN SPDT switch at various control voltage.

DownLoad: CSV
DownLoad: CSV

Table 1.   Effect of buffer layer type on the buffer breakdown voltage.

DownLoad: CSV

Table 2.   Characteristics summary for the GaN switch HEMT with 2, 2.5, 3, 3.5, and 4 $\mu$m drain source spacing.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3717 Times PDF downloads: 77 Times Cited by: 0 Times

    History

    Received: 18 March 2014 Revised: Online: Published: 01 January 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Chunjiang Ren, Hongchang Shen, Zhonghui Li, Tangsheng Chen, Bin Zhang, Tao Gao. GaN HEMT with AlGaN back barrier for high power MMIC switch application[J]. Journal of Semiconductors, 2015, 36(1): 014008. doi: 10.1088/1674-4926/36/1/014008 C J Ren, H C Shen, Z H Li, T S Chen, B Zhang, T Gao. GaN HEMT with AlGaN back barrier for high power MMIC switch application[J]. J. Semicond., 2015, 36(1): 014008. doi: 10.1088/1674-4926/36/1/014008.Export: BibTex EndNote
      Citation:
      Chunjiang Ren, Hongchang Shen, Zhonghui Li, Tangsheng Chen, Bin Zhang, Tao Gao. GaN HEMT with AlGaN back barrier for high power MMIC switch application[J]. Journal of Semiconductors, 2015, 36(1): 014008. doi: 10.1088/1674-4926/36/1/014008

      C J Ren, H C Shen, Z H Li, T S Chen, B Zhang, T Gao. GaN HEMT with AlGaN back barrier for high power MMIC switch application[J]. J. Semicond., 2015, 36(1): 014008. doi: 10.1088/1674-4926/36/1/014008.
      Export: BibTex EndNote

      GaN HEMT with AlGaN back barrier for high power MMIC switch application

      doi: 10.1088/1674-4926/36/1/014008
      More Information
      • Corresponding author: E-mail: rencj2010@sina.com
      • Received Date: 2014-03-18
      • Accepted Date: 2014-08-03
      • Published Date: 2015-01-25

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return