SEMICONDUCTOR TECHNOLOGY

A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning

Haiwen Deng, Baimei Tan, Baohong Gao, Chenwei Wang, Zhangbing Gu and Yan Zhang

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Abstract: A novel cleaning solution, named FA/O alkaline cleaner, was proposed and demonstrated in the removal of colloidal silica abrasives.In order to remove both the chemical and physical absorbed colloidal silica abrasives, an FA/OII chelating agent and non-ionic surfactant were added into the cleaner.By varying the concentration of chelating agent and non-ionic surfactant, a series of experiments were performed to determine the best cleaning results.This paper discusses the mechanism of the removal of colloidal silica abrasives with a FA/O alkaline cleaner.Based on the experiment results, it is concluded that both the FA/OII chelating and non-ionic surfactant could benefit the removal of colloidal silica abrasives.When the concentration of FA/OII chelating agent and FA/O non-ionic surfactant reached the optima value, it was demonstrated that silica abrasives could be removed efficiently by this novel cleaning solution.

Key words: colloidal silica abrasives removalFA/O alkaline cleanernon-ionic surfactantsurface roughness



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Fig. 1.  A SEM image of a colloidal silica abrasive on a copper surface.

Fig. 2.  The surface morphology after CMP.

Fig. 3.  The mechanism of surfactant to remove particles.

Fig. 4.  The surface morphology of post-CMP cleaning with different cleaners.

Fig. 5.  The single defect map of wafer cleaned with the optima cleaner.

Fig. 6.  Illustration of the surfactant molecule layer with low concentration.

Fig. 7.  The surface morphology of post-CMP cleaning.

Fig. 8.  The wafer surface roughness under different surfactant concentration.

Fig. 9.  The surface morphology of post-CMP cleaning with (a) NH$_{4}$OH and (b) TMAH solutions.

Table 1.   Difference between physical adsorption and chemical adsorption.

Main featuresPhysical adsorptionChemical adsorption
Adsorption propertiesVan der Waals forcesBond strength
SelectiveNoYes
Heat of adsorption (kJ/mol)0-2080-400
Adsorption rateFastSlower
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    Received: 06 March 2015 Revised: Online: Published: 01 October 2015

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      Haiwen Deng, Baimei Tan, Baohong Gao, Chenwei Wang, Zhangbing Gu, Yan Zhang. A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning[J]. Journal of Semiconductors, 2015, 36(10): 106002. doi: 10.1088/1674-4926/36/10/106002 H W Deng, B M Tan, B H Gao, C W Wang, Z B Gu, Y Zhang. A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning[J]. J. Semicond., 2015, 36(10): 106002. doi: 10.1088/1674-4926/36/10/106002.Export: BibTex EndNote
      Citation:
      Haiwen Deng, Baimei Tan, Baohong Gao, Chenwei Wang, Zhangbing Gu, Yan Zhang. A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning[J]. Journal of Semiconductors, 2015, 36(10): 106002. doi: 10.1088/1674-4926/36/10/106002

      H W Deng, B M Tan, B H Gao, C W Wang, Z B Gu, Y Zhang. A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning[J]. J. Semicond., 2015, 36(10): 106002. doi: 10.1088/1674-4926/36/10/106002.
      Export: BibTex EndNote

      A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning

      doi: 10.1088/1674-4926/36/10/106002
      Funds:

      Project supported by the Specific Project Items No.2 in National Long-Term Technology Development Plan (No.2009zx02308-003) and the Hebei Province Department of Education Fund (No.QN2014208).

      • Received Date: 2015-03-06
      • Accepted Date: 2015-05-14
      • Published Date: 2015-01-25

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